Method for firing copper paste
First Claim
1. A method for firing a copper paste, the method comprising:
- an application step of applying a copper paste to a substrate, the copper paste comprising copper particles, a binder resin, and a solvent;
after the application step, a first heating step of heating the substrate at 350°
C. or more and 500°
C. or less in a nitrogen gas atmosphere containing 500 ppm or more and 2000 ppm or less of oxidizing gas in a volume ratio, and oxidizing and sintering the copper particles in the copper paste; and
after the first heating step, a second heating step of heating the substrate at 400°
C. or more and 550°
C. or less in a nitrogen gas atmosphere containing 1% or more reducing gas in a volume ratio, and reducing the oxidized and sintered copper oxide,wherein a mass percent of the binder resin in an organic vehicle contained in the copper paste is more than 0.05% and less than 17.0%,wherein the binder resin is one or more selected from a group consisting of cellulose resin, acrylic resin, butyral resin, alkyd resin, epoxy resin and phenol resin,wherein the copper particles in the copper paste are oxidized by oxidation in the first heating step, and cuprous oxide is formed in a continuous shape so as to cover the copper particle surface, andwherein the oxide of copper particles formed by the first heating step includes cuprous oxide and cupric oxide, and heating is carried out such that an amount of the cuprous oxide is larger than an amount of the cupric oxide,wherein an electrical resistivity of a copper wiring obtained after the second heating step is 6 μ
Ω
cm or less.
1 Assignment
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Accused Products
Abstract
To provide a method for firing a copper paste, which improves sinterability of copper particles for the purpose of forming a copper wiring line that is decreased in the electrical conductivity. A method for firing a copper paste, which comprises: an application step wherein a copper paste is applied over a substrate; a first heating step wherein the substrate is heated in a nitrogen gas atmosphere containing from 500 ppm to 2,000 ppm (inclusive) of an oxidizing gas in terms of volume ratio after the application step, thereby oxidizing and sintering copper particles in the copper paste; and a second heating step wherein the substrate is heated in a nitrogen gas atmosphere containing 1% or more of a reducing gas in terms of volume ratio after the first heating step, thereby reducing the oxidized and sintered copper oxide.
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Citations
3 Claims
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1. A method for firing a copper paste, the method comprising:
-
an application step of applying a copper paste to a substrate, the copper paste comprising copper particles, a binder resin, and a solvent; after the application step, a first heating step of heating the substrate at 350°
C. or more and 500°
C. or less in a nitrogen gas atmosphere containing 500 ppm or more and 2000 ppm or less of oxidizing gas in a volume ratio, and oxidizing and sintering the copper particles in the copper paste; andafter the first heating step, a second heating step of heating the substrate at 400°
C. or more and 550°
C. or less in a nitrogen gas atmosphere containing 1% or more reducing gas in a volume ratio, and reducing the oxidized and sintered copper oxide,wherein a mass percent of the binder resin in an organic vehicle contained in the copper paste is more than 0.05% and less than 17.0%, wherein the binder resin is one or more selected from a group consisting of cellulose resin, acrylic resin, butyral resin, alkyd resin, epoxy resin and phenol resin, wherein the copper particles in the copper paste are oxidized by oxidation in the first heating step, and cuprous oxide is formed in a continuous shape so as to cover the copper particle surface, and wherein the oxide of copper particles formed by the first heating step includes cuprous oxide and cupric oxide, and heating is carried out such that an amount of the cuprous oxide is larger than an amount of the cupric oxide, wherein an electrical resistivity of a copper wiring obtained after the second heating step is 6 μ
Ω
cm or less. - View Dependent Claims (2, 3)
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Specification