Method for producing a semiconductor module

• US 10,435,292 B2
• Filed: 07/17/2017
• Issued: 10/08/2019
• Est. Priority Date: 07/20/2016
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Waechter, Claus, Fuergut, Edward, Goller, Bernd, Ledutke, Michael, Maier, Dominic
• Primary Examiner(s): Nguyen, Niki H
• Application Number:
  US15/651,522
• Publication Number:
  US 20180022601A1
• Time in Patent Office: 813 Days
• Field of Search: 257414, 257E31117, 257676, 257E21504, 257E23066, 257678, 257 99, 438 51
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 2207/09 Packages
• CPC Class Codes: B81B 2207/092 Buried interconnects in the substrate or in the lid
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81B 7/0058 for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
• CPC Class Codes: B81B 7/0077 Other packages not provided for in groups B81B7/0035 - B81B7/0074
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 1/00888 Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
• CPC Class Codes: B81C 2201/034 Moulding
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/032 Gluing
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure

Abstract

The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

Claims

1. A method for producing a semiconductor module, the method comprising:

fabricating a semiconductor panel comprising a first mold compound having a plurality of semiconductor devices embedded therein, wherein for each semiconductor device, the first mold compound defines side walls that surround an inner space;

fabricating a cap panel comprising a second mold compound that includes a plurality of caps, wherein each cap is defined by a cavity formed within the second mold compound;

bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices; and

singulating the first mold compound and the second mold compound of the bonded panels into a plurality of semiconductor modules.

2. The method according to claim 1, further comprising:

fabricating the cap panel comprises forming.

3. The method according to claim 2, wherein

fabricating the cap panel comprises molding.

4. The method according to claim 1, wherein

each one of the semiconductor devices comprises a sensor device.

5. The method according to claim 4, wherein

each one of the semiconductor devices comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor.

6. The method according to claim 1, wherein

each one of the semiconductor devices comprises a MEMS device.

7. The method according to claim 1, wherein

the semiconductor panel is a reconfigured wafer obtained by processing a plurality of semiconductor chips in a semiconductor wafer, dicing out the semiconductor chips, and embedding the semiconductor chips in an encapsulant.

8. The method according to claim 1, further comprising:

fabricating the cap panel comprises providing the caps or portions thereof with an electrical conductivity.

9. A semiconductor module, comprising:

a semiconductor device that includes a first mold compound that embeds a semiconductor body, wherein the first mold compound defines side walls that surround an inner space;

and

a cap formed from a second mold compound that is disposed above the semiconductor device such that vertical walls of the cap are aligned with the walls of the first mold compound,

wherein the semiconductor module is fabricated by bonding a cap panel comprising a plurality of caps onto a semiconductor panel comprising a plurality of semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.

10. The semiconductor module according to claim 9, wherein

the semiconductor device comprises a sensor device.

11. The semiconductor module according to claim 10, wherein

the semiconductor device comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor.

12. The semiconductor module according to claim 9, wherein

the semiconductor device comprises a MEMS device.

13. The semiconductor module according to claim 9, wherein

the semiconductor module comprises two or more semiconductor devices.

14. The semiconductor module according to claim 13, wherein

the semiconductor module comprises a sensor device and a further electronic device, wherein the further electronic device is connected to the sensor device and is configured to provide power supply to the sensor device and/or read out electrical signals from the sensor device.

15. The semiconductor module according to claim 14, wherein

the further electronic device is an ASIC device.

16. A packaged MEMS device, comprising:

an embedding arrangement that includes a first mold compound that defines side walls that surround an inner space;

a MEMS device disposed in the embedding arrangement;

a cap formed from a second mold compound and disposed above the MEMS device such that vertical walls of the cap are aligned with the side walls of the first mold compound,

wherein the packaged MEMS device is fabricated by bonding a cap panel comprising a plurality of caps onto a MEMS panel comprising a plurality of MEMS devices, and singulating the bonded panels into a plurality of packaged MEMS devices.

17. The packaged MEMS device according to claim 16, wherein

the MEMS device comprises a sensor device.

18. The packaged MEMS device according to claim 17, wherein

the MEMS device comprises one or more of a pressure sensor, a shock sensor, an acceleration sensor, a temperature sensor, a gas sensor, a humidity sensor, a magnetic field sensor, an electric field sensor, or an optical sensor.

19. The packaged MEMS device according to claim 16, wherein

the MEMS device comprises two or more semiconductor devices.

20. The packaged MEMS device according to claim 19, wherein

the MEMS device comprises a sensor device and a further electronic device, wherein the further electronic device is connected to the sensor device and is configured to provide power supply to the sensor device and/or read out electrical signals from the sensor device.

21. The packaged MEMS device according to claim 20, wherein

the further electronic device is an ASIC device.