Heterogeneous material integration through guided lateral growth
First Claim
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1. A method for generating a crystalline material, the method comprising:
- depositing a textured thin film of a nitride material in a growth seed area, wherein the textured thin film comprises fibrous grains having a majority oriented along a preferred crystallographic axis;
providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and
growing a III-V crystalline material at a temperature of at least 900°
C. in the growth channel along a direction that is perpendicular to the preferred crystallographic axis of the textured thin film, wherein the textured thin film has not undergone recrystallization up until the crystalline material begins to grow, wherein the crystalline material is gallium nitride.
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Abstract
Methods are provided for generating a crystalline material. The methods comprise depositing a textured thin film in a growth seed area, wherein the textured thin film has a preferential crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a crystalline material in the growth channel along a direction that is substantially perpendicular to the preferential crystallographic axis of the textured thin film. A preferred crystalline material is gallium nitride, and preferred textured thin films are aluminum nitride and titanium nitride.
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Citations
21 Claims
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1. A method for generating a crystalline material, the method comprising:
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depositing a textured thin film of a nitride material in a growth seed area, wherein the textured thin film comprises fibrous grains having a majority oriented along a preferred crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing a III-V crystalline material at a temperature of at least 900°
C. in the growth channel along a direction that is perpendicular to the preferred crystallographic axis of the textured thin film, wherein the textured thin film has not undergone recrystallization up until the crystalline material begins to grow, wherein the crystalline material is gallium nitride. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for generating a crystalline material on a substrate, the method comprising:
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depositing a textured thin film of a nitride material in a growth seed area of a substrate, wherein the growth seed area has a first width and the textured thin film comprises fibrous grains having a majority oriented along a preferred crystallographic axis; providing a growth channel on the substrate connected to the growth seed area, the growth channel having a second width, wherein the second width is less than the first width; providing a growth area on the substrate connected to the growth channel, the growth area having a third width, wherein the third width is greater than the second width; and selectively growing gallium nitride crystalline material at a temperature of at least 900°
C. from the growth seed area and continuing through the growth channel such that a multiplicity of orientations in the gallium nitride crystalline material lessen as the growth of the gallium nitride crystalline material extends farther from the growth seed area, wherein the gallium nitride crystalline material in the growth area has a single orientation and wherein the textured thin film has not undergone recrystallization up until selectively growing the gallium nitride crystalline material. - View Dependent Claims (14, 15, 16, 17)
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18. A method for producing a gallium nitride crystalline material, the method comprising:
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depositing a textured thin film of a nitride material in a growth seed area, wherein the textured thin film comprises fibrous grains having a majority oriented along a preferred crystallographic axis; providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and growing the gallium nitride crystalline material at a temperature of at least 900°
C. in the growth channel along a direction that is perpendicular to the preferred crystallographic axis of the textured thin film, wherein the textured thin film has not undergone recrystallization up until the crystalline material begins to grow. - View Dependent Claims (19, 20, 21)
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Specification