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Heterogeneous material integration through guided lateral growth

  • US 10,435,812 B2
  • Filed: 02/19/2013
  • Issued: 10/08/2019
  • Est. Priority Date: 02/17/2012
  • Status: Active Grant
First Claim
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1. A method for generating a crystalline material, the method comprising:

  • depositing a textured thin film of a nitride material in a growth seed area, wherein the textured thin film comprises fibrous grains having a majority oriented along a preferred crystallographic axis;

    providing a growth channel extending from the growth seed area, the growth channel permitting guided lateral growth; and

    growing a III-V crystalline material at a temperature of at least 900°

    C. in the growth channel along a direction that is perpendicular to the preferred crystallographic axis of the textured thin film, wherein the textured thin film has not undergone recrystallization up until the crystalline material begins to grow, wherein the crystalline material is gallium nitride.

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