Methods for manufacturing well structures for low-noise chemical sensors

• US 10,436,742 B2
• Filed: 11/29/2017
• Issued: 10/08/2019
• Est. Priority Date: 01/08/2013
• Status: Active Grant

• Current Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Original Assignee: Life Technologies Corporation (Thermo Fisher Scientific Incorporated)
• Inventors: Li, Shifeng, Bustillo, James
• Primary Examiner(s): Ghyka, Alexander
• Application Number:
  US15/826,627
• Publication Number:
  US 20180217091A1
• Time in Patent Office: 678 Days
• Field of Search: None
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

Claims

1. A method for manufacturing a chemical detection device, the method comprising:

forming a chemical sensor having a sensing surface;

depositing a dielectric material on the sensing surface;

performing a first etch process to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface;

forming an etch protect material on a sidewall of the opening; and

performing a second etch process to selective etching the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

2. The method of claim 1, wherein the chemical sensor is a chemically-sensitive field effect transistor, and the sensing surface is coupled to a channel of the chemically-sensitive field effect transistor.

3. The method of claim 2, wherein the sensing surface is on an upper surface of a floating gate of the field effect transistor.

4. The method of claim 1, wherein the first etch process is an anisotropic etch process, and the second etch process is an isotropic etch process.

5. The method of claim 4, wherein the first etch process is a dry etch process, and the second etch process is a wet etch process.

6. The method of claim 1, wherein the second etch process does not accumulate charge on the sensing surface.

7. The method of claim 1, wherein depositing the dielectric material comprises depositing a first dielectric material on the sensing surface, and depositing a second dielectric material on the first dielectric material.

8. The method of claim 1, wherein forming the etch protect material comprises:

depositing the etch protect material on the remaining dielectric material and the sidewall of the opening; and

etching the etch protect material to expose the remaining dielectric material, thereby forming a sidewall spacer of remaining etch protect material on the sidewall of the opening.

9. The method of claim 8, wherein the sidewall spacer includes a bottom surface spaced away from the sensing surface.

10. The method of claim 1, wherein the chemical sensor generates a sensor signal in response to a chemical reaction occurring within the reaction region.

11. The method of claim 9, wherein the chemical reaction is a sequencing reaction.