Waveguide bends with field confinement

• US 10,436,982 B1
• Filed: 07/18/2018
• Issued: 10/08/2019
• Est. Priority Date: 07/18/2018
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Bian, Yusheng, Jacob, Ajey Poovannummoottil
• Primary Examiner(s): Kim, Ellen E
• Application Number:
  US16/038,868
• Time in Patent Office: 447 Days
• CPC Class Codes: G02B 2006/12035 Materials
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/125 Bends, branchings or intersections
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: G02B 6/136 by etching

Abstract

Structures including waveguide bends, methods of fabricating a structure that includes waveguide bends, and systems that integrate optical components containing different materials. A first waveguide bend is contiguous with a waveguide, and a second waveguide bend is spaced in a vertical direction from the first waveguide bend. The second waveguide bend has an overlapping arrangement with the first waveguide bend in a lateral direction.

Claims

1. A structure comprising:

a waveguide;

a first waveguide bend that is contiguous with the waveguide, the first waveguide bend having an inner surface curved in a first arc with a first arc length; and

a second waveguide bend spaced in a vertical direction from the first waveguide bend, the second waveguide bend having a first overlapping arrangement with the first waveguide bend in a lateral direction, the second waveguide bend having an inner surface curved in a second arc with a second arc length,

wherein the inner surface of the second waveguide bend over the second arc with the second arc length is concentric with the inner surface of the first waveguide bend over the first arc with the first arc length.

2. The structure of claim 1 wherein the first waveguide bend is arranged over the second waveguide bend, the first waveguide bend is comprised of silicon nitride, and the second waveguide bend is comprised of a single-crystal semiconductor material.

3. The structure of claim 1 wherein the second waveguide bend is arranged over the first waveguide bend, the first waveguide bend is comprised of a single-crystal semiconductor material, and the second waveguide bend is comprised of silicon nitride.

4. The structure of claim 1 wherein the first waveguide bend extends along the first arc having a first central angle, the second waveguide bend extends along the second arc having a second central angle, and the first central angle is substantially equal to the second central angle.

5. The structure of claim 1 wherein the first waveguide bend is arranged over the second waveguide bend, the second waveguide bend has a first end, and further comprising:

a first waveguide section that is contiguous with the first end of the second waveguide bend, the waveguide arranged over the first waveguide section.

6. The structure of claim 5 wherein the waveguide is lengthwise straight, the first waveguide section is lengthwise straight and aligned substantially parallel with the waveguide, the second waveguide bend has a second end, the first waveguide section includes a terminating tip that is arranged beneath the waveguide, and further comprising:

a second waveguide section that is contiguous with the second end of the second waveguide bend,

wherein the second waveguide section is lengthwise straight, and the second waveguide section includes a terminating tip that is arranged beneath the waveguide.

7. The structure of claim 5 wherein the waveguide is lengthwise straight, and the first waveguide section is lengthwise curved.

8. The structure of claim 5 wherein the waveguide is lengthwise straight, and the first waveguide section is lengthwise curved in an opposite direction from the second waveguide bend.

9. The structure of claim 5 wherein the first waveguide section has a length and a width that tapers along the length.

10. The structure of claim 1 wherein the second waveguide bend has a complex curvature described by an equation or formula.

11. The structure of claim 1 further comprising:

a third waveguide bend spaced in the vertical direction from the first waveguide bend and contiguous with the second waveguide bend, the third waveguide bend having a second overlapping arrangement with the first waveguide bend in the lateral direction.

19. The structure of claim 1 wherein the second waveguide bend has an outer curved surface, and the second waveguide bend has a constant width between the inner curved surface and the outer curved surface of the second waveguide bend over the arc length of the second arc.

20. The structure of claim 1 wherein the second waveguide bend has a first end and a second end each terminating the second arc, and the second arc length of the inner surface of the second waveguide bend is measured along the inner surface of the second waveguide bend from the first end to the second end.

12. A system comprising:

a waveguide bend comprised of fully-etched single-crystal semiconductor material;

a first plurality of optical components;

a second plurality of optical components;

a first waveguide arranged to couple the first plurality of optical components with the waveguide bend;

a second waveguide arranged to couple the second plurality of optical components with the waveguide bend; and

a first waveguide-to-waveguide coupler coupling the first waveguide to the waveguide bend.

13. The system of claim 12 further comprising:

a second waveguide-to-waveguide coupler coupling the second waveguide to the waveguide bend.

14. The system of claim 12 wherein the first waveguide is comprised of partially-etched single-crystal semiconductor material or silicon nitride, and the second waveguide is comprised of partially-etched single-crystal semiconductor material or silicon nitride.

15. The system of claim 12 wherein the first waveguide is comprised of silicon nitride, and the first waveguide-to-waveguide coupler is configured to couple the silicon nitride of the first waveguide with the fully-etched single-crystal semiconductor material of the waveguide bend.

16. A method comprising:

forming a waveguide and a first waveguide bend that is contiguous with the waveguide; and

forming a second waveguide bend that is spaced in a vertical direction from the first waveguide bend and that overlaps with the first waveguide bend in a lateral direction,

wherein the first waveguide bend has an inner surface curved in a first arc with a first arc length, the second waveguide bend has an inner surface curved in a second arc with a second arc length, and the inner surface of the second waveguide bend over the second arc with the second arc length is concentric with the inner surface of the first waveguide bend over the first arc with the first arc length.

17. The method of claim 16 wherein forming the second waveguide bend that is spaced in the vertical direction from the first waveguide bend and that overlaps with the first waveguide bend in the lateral direction further comprises:

patterning a device layer of a silicon-on-insulator wafer with a first lithography and etching process that etches fully through the device layer in the vertical direction to form the second waveguide bend.

18. The method of claim 17 wherein forming the waveguide and the first waveguide bend that is contiguous with the waveguide further comprises:

depositing a layer of silicon nitride; and

patterning the layer of silicon nitride with a second lithography and etching process to form the waveguide and the first waveguide bend.