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Cross-point memory and methods for fabrication of same

  • US 10,439,001 B2
  • Filed: 12/29/2017
  • Issued: 10/08/2019
  • Est. Priority Date: 02/25/2014
  • Status: Active Grant
First Claim
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1. A memory array, comprising:

  • a substrate;

    a plurality of memory cell stacks formed across the substrate, each of the memory cell stacks comprising;

    a first pair of opposing sidewalls extending in a first direction;

    a second pair of opposing sidewalls extending in a second direction and opposing each other;

    a first dielectric material formed on the first pair of opposing sidewalls, the first dielectric material in contact with a selector element material and extending from a first electrode material to and in contact with a second electrode material, the first electrode material above the substrate, the selector element material in contact with the first electrode material, the second electrode material in contact with the selector element material;

    a second dielectric material formed on at least a portion of the second pair of opposing sidewalls, the second dielectric material in contact with the selector element material and extending from the first electrode material to and in contact with the second electrode material, the second dielectric material in contact with a portion of an upper surface of the first dielectric material and an upper surface of an isolation dielectric in contact with the first dielectric material;

    a storage element material in contact with the second electrode material; and

    a third electrode material in contact with the storage element material.

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