Method for manufacturing transistor

• US 10,439,050 B2
• Filed: 03/17/2017
• Issued: 10/08/2019
• Est. Priority Date: 12/19/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sakata, Junichiro
• Primary Examiner(s): Ahmad, Khaja
• Application Number:
  US15/461,767
• Publication Number:
  US 20170194465A1
• Time in Patent Office: 935 Days
• Field of Search: None
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming an electrode over a substrate;

forming an insulating layer over the electrode;

forming an oxide semiconductor layer over the insulating layer;

forming a layer selectively so as to leave a part of the layer overlapping with a second region of the oxide semiconductor layer, and so as to expose a first region of the oxide semiconductor layer; and

performing an oxidizing treatment to the oxide semiconductor layer, thereby a concentration of hydrogen included in the first region of the oxide semiconductor layer is lower than a concentration of hydrogen included in the second region of the oxide semiconductor layer by using a hydrogen absorption layer in contact with the first region of the oxide semiconductor layer,

wherein the electrode overlaps with the first region of the oxide semiconductor layer.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the layer comprises a material selected from the group consisting of a silicon nitride, a silicon nitride oxide, a silicon oxide, a silicon oxynitride, an aluminum oxide, an aluminum nitride, an aluminum oxynitride, a titanium oxide, a tantalum oxide, a titanium nitride and a tantalum nitride.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises indium.

4. The method for manufacturing a semiconductor device according to claim 1, wherein concentration gradient of hydrogen is formed between the first region and the second region.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the layer is a hydrogen barrier layer.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the concentration of hydrogen included in the first region of the oxide semiconductor layer and the concentration of hydrogen included in the second region of the oxide semiconductor layer are measured by secondary ion mass spectrometry.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the concentration of hydrogen included in the first region of the oxide semiconductor layer is greater than or equal to 1×

10¹⁶ atoms/cm³ and less than or equal to 1×

10²¹ atoms/cm³.

8. A method for manufacturing a semiconductor device comprising the steps of:

forming a first electrode over a substrate;

forming an insulating layer over the first electrode;

forming an oxide semiconductor layer over the insulating layer;

forming a layer selectively so as to leave a part of the layer overlapping with a second region of the oxide semiconductor layer, and so as to expose a first region of the oxide semiconductor layer;

performing an oxidizing treatment to the oxide semiconductor layer, thereby a concentration of hydrogen included in the first region of the oxide semiconductor layer is lower than a concentration of hydrogen included in the second region of the oxide semiconductor layer by using a hydrogen absorption layer in contact with the first region of the oxide semiconductor layer; and

forming a pair of second electrodes over the insulating layer,

wherein the first electrode overlaps with the first region of the oxide semiconductor layer, and

wherein the pair of the second electrodes are in contact with the second region of the oxide semiconductor layer.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the layer comprises a material selected from the group consisting of a silicon nitride, a silicon nitride oxide, a silicon oxide, a silicon oxynitride, an aluminum oxide, an aluminum nitride, an aluminum oxynitride, a titanium oxide, a tantalum oxide, a titanium nitride and a tantalum nitride.

10. The method for manufacturing a semiconductor device according to claim 8, wherein the oxide semiconductor layer comprises indium.

11. The method for manufacturing a semiconductor device according to claim 8, wherein concentration gradient of hydrogen is formed between the first region and the second region.

12. The method for manufacturing a semiconductor device according to claim 8, wherein the layer is a hydrogen barrier layer.

13. The method for manufacturing a semiconductor device according to claim 8, wherein the concentration of hydrogen included in the first region of the oxide semiconductor layer and the concentration of hydrogen included in the second region of the oxide semiconductor layer are measured by secondary ion mass spectrometry.

14. The method for manufacturing a semiconductor device according to claim 8, wherein the concentration of hydrogen included in the first region of the oxide semiconductor layer is greater than or equal to 1×

10¹⁶ atoms/cm³ and less than or equal to 1×

10²¹ atoms/cm³.

15. The method for manufacturing a semiconductor device according to claim 8, wherein the first electrode is a gate electrode.

16. The method for manufacturing a semiconductor device according to claim 8, wherein the pair of the second electrodes are source and drain electrodes.