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Oxide semiconductor film and semiconductor device

  • US 10,439,068 B2
  • Filed: 01/29/2016
  • Issued: 10/08/2019
  • Est. Priority Date: 02/12/2015
  • Status: Active Grant
First Claim
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1. An oxide semiconductor film comprising In, M, and Zn,wherein the oxide semiconductor film has a composition in a neighborhood of a solid solution range of an In1+xM1−

  • xO3(ZnO)y structure,wherein the M is Al, Ga, Y, or Sn,wherein x satisfies 0<

    x<

    0.5,wherein y is approximately 1,wherein the oxide semiconductor film is formed with a sputtering apparatus,wherein the sputtering apparatus comprises a polycrystalline metal oxide target,wherein the polycrystalline metal oxide target has a composition in a neighborhood of In;

    M;

    Zn=4;

    2;

    4.1, andwherein in the case where a proportion of the In of the polycrystalline metal oxide target is 4, a proportion of the M is greater than or equal to 1.5 and less than or equal to 2.5 and a proportion of the Zn is greater than or equal to 3.1 and less than or equal to 5.1.

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