Termination structure for insulated gate semiconductor device and method
First Claim
1. A semiconductor device structure, comprising:
- a region of semiconductor material comprising;
a first conductivity type;
a first major surface;
a second major surface opposite to the first major surface;
an active region; and
a termination region;
an active structure disposed in the active region comprising;
a first active trench extending from the first major surface into the region of semiconductor material to a first depth; and
a first conductive structure within the first active trench and electrically isolated from the region of semiconductor material by a first dielectric structure;
a termination structure disposed in the termination region comprising;
a first termination trench extending from the first major surface into the region of semiconductor material to a second depth;
a second conductive structure within the first termination trench and electrically isolated from the region of semiconductor material by a second dielectric structure; and
a dielectric layer disposed overlying the first major surface and overlapping the first termination trench to provide the termination structure as an electrically floating structure;
a Schottky contact region disposed adjacent the first major surface on opposing sides of the first active trench; and
a first conductive layer disposed overlying the first major surface and electrically coupled to the Schottky contact region, wherein;
the first active trench has a first width proximate to the first major surface;
the first termination trench has a second width proximate to the first major surface;
the second width and the first width are substantially equal; and
the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the first termination trench.
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Accused Products
Abstract
A semiconductor device structure includes a region of semiconductor material having an active region and a termination region. An active structure is disposed in the active region and a termination structure is disposed in the termination region. In one embodiment, the termination structure includes a termination trench and a conductive structure within the termination trench and electrically isolated from the region of semiconductor material by a dielectric structure. A dielectric layer is disposed to overlap the termination trench to provide the termination structure as a floating structure. A Schottky contact region is disposed within the active region. A conductive layer is electrically connected to the Schottky contact region and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the termination trench.
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Citations
20 Claims
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1. A semiconductor device structure, comprising:
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a region of semiconductor material comprising; a first conductivity type; a first major surface; a second major surface opposite to the first major surface; an active region; and a termination region; an active structure disposed in the active region comprising; a first active trench extending from the first major surface into the region of semiconductor material to a first depth; and a first conductive structure within the first active trench and electrically isolated from the region of semiconductor material by a first dielectric structure; a termination structure disposed in the termination region comprising; a first termination trench extending from the first major surface into the region of semiconductor material to a second depth; a second conductive structure within the first termination trench and electrically isolated from the region of semiconductor material by a second dielectric structure; and a dielectric layer disposed overlying the first major surface and overlapping the first termination trench to provide the termination structure as an electrically floating structure; a Schottky contact region disposed adjacent the first major surface on opposing sides of the first active trench; and a first conductive layer disposed overlying the first major surface and electrically coupled to the Schottky contact region, wherein; the first active trench has a first width proximate to the first major surface; the first termination trench has a second width proximate to the first major surface; the second width and the first width are substantially equal; and the first conductive layer extends onto a surface of the dielectric layer and laterally overlaps at least a portion of the first termination trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device structure, comprising:
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a region of semiconductor material comprising; a first conductivity type; a first major surface; a second major surface opposite to the first major surface; an active region; and a termination region; an active structure disposed in the active region comprising; a first active trench extending from the first major surface into the region of semiconductor material to a first depth; and a first conductive structure within the first active trench and electrically isolated from the region of semiconductor material by a first dielectric structure, wherein the first active trench has a first width proximate to the first major surface; a termination structure disposed in the termination region comprising; a first termination trench extending from the first major surface into the region of semiconductor material to a second depth; a second conductive structure within the first termination trench and electrically isolated from the region of semiconductor material by a second dielectric structure, wherein; the first termination trench comprises; a second width proximate to the first major surface; a first side surface; a second side surface opposite to the first side surface; and a first lower surface extending between the first side surface and the second side surface; the first side surface is interposed between the second side surface and the first active trench; and the second conductive structure comprises; a first conductive spacer disposed proximate to the first side surface of the first termination trench; and a second conductive spacer disposed proximate to the second side surface of the first termination trench; and a dielectric layer disposed overlying a portion of the first major surface and overlapping the first conductive spacer and overlapping the second conductive spacer, wherein an opening is disposed within the dielectric layer proximate to the first lower surface of the first termination trench; a Schottky contact region disposed adjacent the first major surface on opposing sides of the first active trench; and a first conductive layer disposed overlying the first major surface and electrically coupled to the Schottky contact region, wherein the first conductive layer is further electrically coupled to the region of semiconductor material in the opening. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device structure, comprising:
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a region of semiconductor material comprising; a first conductivity type; a first major surface; a second major surface opposite to the first major surface; an active region, and a termination region; an active structure disposed in the active region comprising; a first active trench extending from the first major surface into the region of semiconductor material to a first depth; and a first conductive structure within the first active trench and electrically isolated from the region of semiconductor material by a first dielectric structure, wherein the first active trench has a first width proximate to the first major surface; a termination structure disposed in the termination region comprising; a first termination trench extending from the first major surface into the region of semiconductor material to a second depth; a second conductive structure within the first termination trench and electrically isolated from the region of semiconductor material by a second dielectric structure, wherein; the first termination trench comprises; a second width proximate to the first major surface; a first side surface; a second side surface opposite to the first side surface; and a first lower surface extending between the first side surface and the second side surface; the first side surface is interposed between the second side surface and the first active trench; and the second conductive structure comprises; a first conductive spacer disposed proximate to the first side surface of the first termination trench; and a second conductive spacer disposed proximate to the second side surface of the first termination trench; a second termination trench extending from the first major surface into the region of semiconductor material to a third depth; and a third conductive structure within the second termination trench and electrically isolated from the region of semiconductor material by a third dielectric structure, wherein; the second termination trench comprises; a third width proximate to the first major surface; a third side surface; a fourth side surface opposite to the third side surface of the second termination trench; and a second lower surface extending between the third side surface and the fourth side surface; the third side surface of the second termination trench is interposed between the fourth side surface of the second termination trench and the first active trench; the third conductive structure comprises; a third conductive spacer disposed proximate to the third side surface of the second termination trench; and a fourth conductive spacer disposed proximate to the fourth side surface of the second termination trench; a dielectric layer disposed overlying a portion of the first major surface and overlapping the first conductive spacer, the second conductive spacer, the third conductive spacer, and the fourth conductive spacer, wherein an opening is disposed within the dielectric layer proximate to the first lower surface of the first termination trench; a Schottky contact region disposed adjacent the first major surface on opposing sides of the first active trench; and a first conductive layer disposed overlying the first major surface and electrically coupled to the Schottky contact region, wherein; the first conductive layer extends into the first termination trench and the second termination trench; the first conductive spacer and third conductive spacer are configured to be electrically floating; and the first conductive layer is further electrically coupled to the region of semiconductor material in the opening.
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Specification