Light emitting diode and light emitting diode package

• US 10,439,105 B2
• Filed: 08/02/2016
• Issued: 10/08/2019
• Est. Priority Date: 09/16/2011
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Chae, Jong Hyeon, Jang, Jong Min, Roh, Won Young, Suh, Daewoong, Cho, Dae Sung, Lee, Joon Sup, Lee, Kyu Ho, In, Chi Hyun
• Primary Examiner(s): Whalen, Daniel
• Assistant Examiner(s): Chi, Suberr L
• Application Number:
  US15/226,304
• Publication Number:
  US 20160343911A1
• Time in Patent Office: 1,162 Days
• CPC Class Codes: H01L 2224/1403 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer.

Claims

1. A light emitting diode, comprising:

a first conductive type semiconductor layer;

a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;

a reflective electrode disposed on the mesa and in ohmic-contact with the second conductive type semiconductor layer;

a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising a first portion in ohmic-contact with an upper surface of the first conductive type semiconductor layer;

a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions;

an insulation layer comprising a first opening exposing the reflective electrode disposed on the mesa that is disposed between the first and second n-contact regions, and

wherein each of the first and second n-contact regions has a second opening that exposes the first conductive type semiconductor layer,

wherein the current spreading layer is in ohmic contact with an end portion of the upper surface of the first conductive type semiconductor layer, and

wherein insulation layer further comprises;

a lower insulating layer disposed between the mesa and the current spreading layer, as well as the reflective electrode and the current spreading layer, the lower insulating layer configured to insulate the current spreading layer from the mesa and the reflective electrode; and

an upper insulating layer covering the current spreading layer, the upper insulating layer comprising a first hole exposing a second portion of the current spreading layer that is disposed on an upper portion of the mesa.

2. The light emitting diode of claim 1, wherein:

the lower insulating layer is disposed to partially cover the reflective electrode; and

the upper insulation layer is disposed to cover the first conductive type semiconductor layer.

3. The light emitting diode of claim 2, wherein the lower and upper insulation layers each comprise silicon dioxide.

4. The light emitting diode of claim 1, wherein:

the lower insulating layer comprises at least one of silicon dioxide and silicon nitride; and

the upper insulating layer comprises at least one of silicon dioxide and silicon nitride.

5. The light emitting diode of claim 1, wherein the first hole of the upper insulating layer exposes a third portion of the current spreading layer that is disposed on a side wall of the mesa with the lower insulating layer disposed between the third portion of the current spreading layer and the side wall of the mesa.

6. The light emitting diode of claim 1, wherein the first portion of the current spreading layer is configured to be in ohmic-contact along a periphery of the first conductive type semiconductor layer.

7. The light emitting diode of claim 1, wherein the upper insulating layer covers the first portion of the current spreading layer and the end portion of the first conductive type semiconductor layer.

8. The light emitting diode of claim 7, wherein the lower insulating layer covers part of the end portion of the first conductive type semiconductor layer.

9. The light emitting diode of claim 1, further comprising a first pad disposed on the current spreading layer through the first hole of the upper insulating layer such that the first pad is configured to be in ohmic contact with the first portion of the current spreading layer that is disposed on the mesa.

10. The light emitting diode of claim 9, wherein:

the lower insulating layer comprises a first hole exposing the reflective electrode;

the upper insulating layer comprises a second hole also exposing the reflective electrode; and

the first hole of the lower insulating layer is different in area than the second hole of the upper insulating layer.

11. The light emitting diode of claim 10, further comprising a second pad disposed on the reflective electrode exposed through the first hole of the lower insulating layer and the second hole of the upper insulating layer.

12. The light emitting diode of claim 11, wherein the reflective electrode comprises a reflective metal layer and a barrier layer covering a top portion and a side portion of the reflective metal layer.

13. The light emitting diode of claim 12, wherein the reflective electrode further comprises a stress relieving layer disposed between the top portion of the reflective metal layer and the barrier layer.

14. The light emitting diode of claim 1, wherein the reflective electrode comprises a reflective metal.

15. A light emitting diode (LED) package, comprising:

a first conductive type semiconductor layer;

a mesa disposed on the first conductive type semiconductor layer, the mesa comprising an active layer and a second conductive type semiconductor layer;

a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the corresponding second conductive type semiconductor layer;

a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer comprising a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer;

a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact region; and

an insulation layer comprising a first opening exposing the reflective electrode disposed on the mesa that is disposed between the first and second n-contact regions;

a first pad covering a first portion of the mesa and electrically connected to the first conductive type semiconductor layer; and

a second pad covering a second portion of the mesa and electrically connected to the second conductive type layer,

wherein each of the first and second n-contact regions has a second opening that exposes the first conductive type semiconductor layer.

16. The LED package of claim 15, wherein the current spreading layer is configured to be in ohmic contact with an end portion of the upper surface of the first conductive type semiconductor layer.

17. The LED package of claim 15, wherein:

the first pad contacts the current spreading layer through at least one of second openings of the first or second n-contact regions; and

the second pad contacts the reflective electrode through the first opening.

18. The LED package of claim 17, wherein the first pad contacts the current spreading layer through the second openings of the first and second n-contact regions.

19. The LED package of claim 18, wherein at least one of the first pad and the second pad has a generally rectangular shape.