Manufacturable laser diode formed on c-plane gallium and nitrogen material
First Claim
1. A method for manufacturing a laser diode device, the method comprising:
- providing a gallium and nitrogen containing substrate having a surface region;
forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and
an interface region overlying the p-type gallium and nitrogen containing region;
forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;
bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;
subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer the bonded dies to the carrier substrate;
configuring at least a pair of adjacent transferred dies with a second pitch on the carrier substrate that is different from the first pitch; and
processing at least one of the transferred dies on the carrier substrate to form the laser diode device.
1 Assignment
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Accused Products
Abstract
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
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Citations
19 Claims
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1. A method for manufacturing a laser diode device, the method comprising:
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providing a gallium and nitrogen containing substrate having a surface region; forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and
an interface region overlying the p-type gallium and nitrogen containing region;forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device; bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies; subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer the bonded dies to the carrier substrate; configuring at least a pair of adjacent transferred dies with a second pitch on the carrier substrate that is different from the first pitch; and processing at least one of the transferred dies on the carrier substrate to form the laser diode device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating a laser diode device comprising:
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providing a gallium and nitrogen containing substrate member comprising a surface region; forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing material overlying the release material;
an active region overlying the n-type gallium and nitrogen containing material, a p-type gallium and nitrogen containing material overlying the active region;
a first transparent conductive oxide material overlying the epitaxial material, and an interface region overlying the first transparent conductive oxide material;patterning the epitaxial material to form a plurality of dies, wherein each pair of adjacent dies is characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device; bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies; subjecting the release material associated with the bonded dies to an energy source to initiate release of the gallium and nitrogen containing substrate member and transfer the bonded dies to the carrier substrate; wherein each pair of adjacent transferred dies is configured with a second pitch on the carrier substrate that is different from the first pitch; and processing at least one of transferred dies on the carrier substrate to form the laser diode device. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification