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Manufacturable laser diode formed on c-plane gallium and nitrogen material

  • US 10,439,364 B2
  • Filed: 09/01/2017
  • Issued: 10/08/2019
  • Est. Priority Date: 10/18/2013
  • Status: Active Grant
First Claim
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1. A method for manufacturing a laser diode device, the method comprising:

  • providing a gallium and nitrogen containing substrate having a surface region;

    forming an epitaxial material overlying the surface region, the epitaxial material comprising a release material overlying the surface region, an n-type gallium and nitrogen containing region overlying the release material, an active region comprising at least one quantum well layer overlying the n-type gallium and nitrogen containing region, a p-type gallium and nitrogen containing region overlying the active region; and

    an interface region overlying the p-type gallium and nitrogen containing region;

    forming a plurality of dies by patterning the epitaxial material, each pair of adjacent dies being characterized by a first pitch between the pair of dies, each of the dies corresponding to at least one laser diode device;

    bonding the interface region associated with a portion of the plurality of dies to a carrier substrate to form bonded dies;

    subjecting the release material of the bonded dies to an energy source to release the bonded dies from the gallium and nitrogen containing substrate and transfer the bonded dies to the carrier substrate;

    configuring at least a pair of adjacent transferred dies with a second pitch on the carrier substrate that is different from the first pitch; and

    processing at least one of the transferred dies on the carrier substrate to form the laser diode device.

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