Flourination process to create sacrificial oxy-flouride layer

• US 10,443,125 B2
• Filed: 04/27/2018
• Issued: 10/15/2019
• Est. Priority Date: 05/10/2017
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Wu, Xiaowei, Fenwick, David, Zhan, Guodong, Sun, Jennifer Y., Rice, Michael R.
• Primary Examiner(s): Vinh, Lan
• Application Number:
  US15/965,812
• Publication Number:
  US 20180327898A1
• Time in Patent Office: 536 Days
• Field of Search: 216 37, 216 38, 216 67, 216 71, 216 73, 216 75, 216 77, 216 80, 438758, 438762, 438770
• CPC Class Codes: B32B 15/00 Layered products comprising a layer of metal
• CPC Class Codes: B32B 15/04 comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a bituminous or tarry layer B32B11/08; next to a water-setting substance layer B32B13/06; next to a glass layer B32B17/061; next to a cellulosic plastic layer B32B23/042
• CPC Class Codes: B32B 2250/02 2 layers
• CPC Class Codes: B32B 2250/03 3 layers
• CPC Class Codes: B32B 2255/06 on metal layer
• CPC Class Codes: B32B 2255/20 Inorganic coating
• CPC Class Codes: B32B 2311/00 Metals, their alloys or their compounds
• CPC Class Codes: B32B 2315/02 Ceramics
• CPC Class Codes: B32B 9/005 comprising one layer of ceramic material, e.g. porcelain, ceramic tile layered products with at least two ceramic layers composed mainly of ceramic B32B18/00
• CPC Class Codes: B32B 9/04 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material next to a glass layer B32B17/06; layered products with at least two ceramic layers composed mainly of ceramic B32B18/00
• CPC Class Codes: C23C 14/081 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 14/221 Ion beam deposition C23C14/46, C23C14/48 take precedence
• CPC Class Codes: C23C 14/5826 Treatment with charged particles C23C14/582 takes precedence
• CPC Class Codes: C23C 14/5846 Reactive treatment
• CPC Class Codes: C23C 16/28 Deposition of only one other non-metal element
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45525 : Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45536 : Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45555 : applied in non-semiconductor technology
• CPC Class Codes: C23C 16/56 : After-treatment
• CPC Class Codes: C23C 28/04 : only coatings of inorganic non-metallic material
• CPC Class Codes: C23C 28/042 : including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
• CPC Class Codes: C23C 28/42 : characterized by the composition of the alternating layers
• CPC Class Codes: C23C 4/11 : Oxides
• CPC Class Codes: C23C 4/134 : Plasma spraying
• CPC Class Codes: C23C 4/18 : After-treatment
• CPC Class Codes: H01J 2237/332 : Coating
• CPC Class Codes: H01J 2237/334 : Etching
• CPC Class Codes: H01J 37/32357 : Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32908 : Utilities
• CPC Class Codes: H01J 37/32963 : End-point detection
• CPC Class Codes: Y10T 428/12028 : Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
• CPC Class Codes: Y10T 428/12049 : Nonmetal component
• CPC Class Codes: Y10T 428/12667 : Oxide of transition metal or Al
• CPC Class Codes: Y10T 428/31504 : Composite [nonstructural laminate]
• CPC Class Codes: Y10T 428/31678 : Of metal

Abstract

An article comprises a body having a coating. The coating comprises a Y—O—F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Claims

1. A method comprising:

loading a substrate into a processing chamber, the processing chamber comprising one or more chamber components that include a metal oxide coating;

performing an in-situ fluorination process comprising;

introducing a fluorine-based plasma from a remote plasma source into the processing chamber at a temperature of room temperature to 800°

C. for a time period of 0.5-10 minutes; and

reacting the metal oxide coating with the fluorine-based plasma to form a temporary M-O—

F layer over the metal oxide coating, wherein the temporary M-O—

F layer has a thickness of 1-50 nm;

performing a manufacturing process comprising a corrosive gas on the substrate, wherein the manufacturing process adjusts a thickness of the temporary M-O—

F layer, and wherein the temporary M-O—

F layer protects the metal oxide coating from the corrosive gas;

repeating the in-situ fluorination process and the manufacturing process for a plurality of additional substrates;

determining that an etch back criterion is satisfied; and

performing an etch back process to remove at least a portion of the temporary M-O—

F layer.

2. The method of claim 1, wherein the metal oxide coating is selected from the group consisting of Al₂O₃, Er₂O₃, Y₂O₃, Y₂O₃ stabilized ZrO₂ (YSZ), Er₃Al₅O₁₂ (EAG), a solid solution of Y₂O₃—

ZrO₂, and a composite ceramic comprising Y₄Al₂O₉ and a solid solution of Y₂O₃—

ZrO₂.

3. The method of claim 1, wherein the metal oxide coating is selected from the group consisting of:

a metal oxide coating deposited by plasma spraying, the metal oxide coating having a porosity of about 2-5% and a thickness of about 100-300 μ

m;

a metal oxide coating deposited by atomic layer deposition (ALD), the metal oxide coating having a porosity of approximately 0% and a thickness of about 10 nm to about 10 μ

m;

a metal oxide coating deposited by electron beam ion assisted deposition (EB-IAD), the metal oxide coating having a porosity of approximately 0% and a thickness of about 1-10 μ

m; and

a metal oxide coating deposited by a suspension plasma spray process, the metal oxide coating having a porosity of approximately 1-3% and a thickness of about 50-300 μ

m.

4. The method of claim 1, wherein the manufacturing process comprising the corrosive gas removes at least a portion of the temporary M-O—

F layer without damaging the metal oxide coating.

5. The method of claim 1, further comprising:

performing optical emission spectroscopy to determine whether the temporary M-O—

F layer has reached a target thickness; and

stopping the etch back process responsive to determining that the temporary M-O—

F layer has reached the target thickness.

6. The method of claim 1, wherein determining that the etch back criterion has been satisfied comprises at least one of a) determining that a threshold number of substrates have been processed or b) detecting a threshold amount of particles on a processed substrate.

7. The method of claim 1, wherein the etch back process is performed by flowing at least one of an SiCl₄ gas or an SiCl₄ plasma into the processing chamber.

8. The method of claim 7, wherein the etch back process is further performed by flowing a Cl₂ gas into the processing chamber.

9. The method of claim 7, wherein 1-5 SCCM of at least one of the SiCl₄ gas or the SiCl₄ plasma is flowed into the processing chamber for a duration of 1-5 seconds.

10. A method comprising:

performing a fluorination process in a processing chamber comprising one or more chamber components that include a rare earth oxide, the fluorination process comprising;

introducing a fluorine-based plasma from a remote plasma source into the processing chamber at a temperature of about room temperature to about 800°

C. for a time period of 0.5-10 minutes; and

reacting the rare earth oxide coating with the fluorine-based plasma to form a temporary rare earth oxy-fluoride layer over the rare earth oxide coating, wherein the temporary rare earth oxy-fluoride layer has a thickness of 1-5 nm;

performing a manufacturing process comprising a corrosive gas, wherein the manufacturing process adjusts a thickness of the temporary rare earth oxy-fluoride layer, and wherein the temporary rare earth oxy-fluoride layer protects the rare earth oxide coating from the corrosive gas;

repeating the fluorination process and the manufacturing process a plurality of times;

determining that an etch back criterion is satisfied; and

performing an etch back process to remove at least a portion of the temporary rare earth oxy-fluoride layer.

11. The method of claim 10, wherein the rare earth oxide coating is selected from the group consisting of Er₂O₃, Y₂O₃, Y₂O₃ stabilized ZrO₂ (YSZ), Er₃Al₅O₁₂ (EAG), a solid solution of Y₂O₃—

ZrO₂, and a composite ceramic comprising Y₄Al₂O₉ and a solid solution of Y₂O₃—

ZrO₂.

12. The method of claim 10, wherein the rare earth oxide coating is selected from the group consisting of:

a rare earth oxide coating deposited by plasma spraying, the rare earth oxide coating having a porosity of about 2-5% and a thickness of about 100-300 μ

m;

a rare earth oxide coating deposited by atomic layer deposition (ALD), the rare earth oxide coating having a porosity of approximately 0% and a thickness of about 10 nm to about 1 μ

m;

a rare earth oxide coating deposited by ion assisted deposition (IAD), the rare earth oxide coating having a porosity of approximately 0% and a thickness of about 1-10 μ

m; and

a rare earth oxide coating deposited by a suspension plasma spray process, the rare earth oxide coating having a porosity of approximately 1-3% and a thickness of about 50-100 μ

m.

13. The method of claim 10, wherein the manufacturing process comprising the corrosive gas removes at least a portion of the temporary rare earth oxy-fluoride layer without damaging the rare earth oxide coating.

14. The method of claim 10, wherein determining that the etch back criterion has been satisfied comprises at least one of a) determining that a threshold number of substrates have been processed or b) detecting a threshold amount of particles on a processed substrate.

15. The method of claim 10, wherein the etch back process is performed by flowing at least one of an SiCl₄ gas or an SiCl₄ plasma into the processing chamber.

16. The method of claim 15, wherein the etch back process is further performed by flowing a Cl₂ gas into the processing chamber.

17. A method comprising:

performing a fluorination process in a processing chamber comprising one or more chamber components that include a rare earth oxide, the fluorination process comprising;

exposing the one or more chamber components in the processing chamber to a fluorine-based acid solution at a temperature of about room temperature to about 100°

C. for a time period of 0.5-10 minutes; and

reacting the rare earth oxide coating with the fluorine-based acid solution to form a temporary rare earth oxy-fluoride layer over the rare earth oxide coating, wherein the temporary rare earth oxy-fluoride layer has a thickness of 1-50 nm;

performing a manufacturing process comprising a corrosive gas, wherein the manufacturing process adjusts a thickness of the temporary rare earth oxy-fluoride layer, and wherein the temporary rare earth oxy-fluoride layer protects the rare earth oxide coating from the corrosive gas;

repeating the fluorination process and the manufacturing process a plurality of times;

determining that an etch back criterion is satisfied; and

performing an etch back process to remove at least a portion of the temporary rare earth oxy-fluoride layer.

18. The method of claim 17, wherein the fluorine-based acid solution is an HF acid solution comprising 50-95 vol % water and 0.1-50 vol % HF acid.