Zone-controlled rare-earth oxide ALD and CVD coatings
First Claim
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1. A method comprising:
- depositing a plasma resistant protective coating comprising a plurality of crystalline rare-earth oxide layers and a plurality of crystalline or amorphous metal oxide layers onto a surface of an article using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process, wherein depositing the plasma resistant protective coating comprises alternately depositing;
a crystalline rare-earth oxide layer of the plurality of crystalline rare-earth oxide layers using ALD or CVD; and
a crystalline or amorphous metal oxide layer of the plurality of crystalline or amorphous metal oxide layers using ALD or CVD;
wherein when the plurality of metal oxide layers are crystalline, the plurality of metal oxide layers have an atomic crystalline phase different from an atomic crystalline phase of the plurality of crystalline rare-earth oxide layers;
wherein the plurality of crystalline or amorphous metal oxide layers are interrupt layers that inhibit grain growth of the plurality of crystalline rare-earth oxide layers such that all grains in the plurality of crystalline rare-earth oxide layers have a grain size that is below 100 nm in length and that is below 200 nm in width; and
wherein a thickness ratio of thickness of the crystalline rare-earth oxide layer to thickness of the crystalline or amorphous metal oxide layer is about 10;
1 to about 500;
1 such that the thickness of the crystalline or amorphous metal oxide layer is lower than the thickness of the crystalline rare-earth oxide layer.
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Abstract
Disclosed herein is a rare-earth oxide coating on a surface of an article with one or more interruption layers to control crystal growth and methods of its formation. The coating may be deposited by atomic layer deposition and/or by chemical vapor deposition. The rare-earth oxides in the coatings disclosed herein may have an atomic crystalline phase that is different from the atomic crystalline phase or the amorphous phase of the one or more interruption layers.
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Citations
15 Claims
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1. A method comprising:
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depositing a plasma resistant protective coating comprising a plurality of crystalline rare-earth oxide layers and a plurality of crystalline or amorphous metal oxide layers onto a surface of an article using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process, wherein depositing the plasma resistant protective coating comprises alternately depositing; a crystalline rare-earth oxide layer of the plurality of crystalline rare-earth oxide layers using ALD or CVD; and a crystalline or amorphous metal oxide layer of the plurality of crystalline or amorphous metal oxide layers using ALD or CVD; wherein when the plurality of metal oxide layers are crystalline, the plurality of metal oxide layers have an atomic crystalline phase different from an atomic crystalline phase of the plurality of crystalline rare-earth oxide layers; wherein the plurality of crystalline or amorphous metal oxide layers are interrupt layers that inhibit grain growth of the plurality of crystalline rare-earth oxide layers such that all grains in the plurality of crystalline rare-earth oxide layers have a grain size that is below 100 nm in length and that is below 200 nm in width; and wherein a thickness ratio of thickness of the crystalline rare-earth oxide layer to thickness of the crystalline or amorphous metal oxide layer is about 10;
1 to about 500;
1 such that the thickness of the crystalline or amorphous metal oxide layer is lower than the thickness of the crystalline rare-earth oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 13, 14, 15)
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12. A method comprising depositing a plasma resistant protective coating onto a surface of an article using an atomic layer deposition (ALD) process or a chemical vapor deposition (CVD) process, comprising:
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depositing a stack of alternating layers of crystalline yttrium oxide layers and crystalline or amorphous metal oxide layers using the ALD process or the CVD process, wherein the crystalline yttrium oxide layers have a cubic phase, wherein when the metal oxide layers are crystalline, the metal oxide layers have an atomic crystalline phase different from the cubic phase of the crystalline yttrium oxide layers, wherein a first layer in the stack of alternating layers is a crystalline yttrium oxide layer, wherein the crystalline or amorphous metal oxide layers are interrupt layers that inhibit grain growth in the crystalline yttrium oxide layers such that all grains in the crystalline yttrium oxide layers have a grain size that is below 100 nm in length and that is below 200 nm in width, and wherein a thickness ratio of the thickness of the crystalline yttrium oxide layers to the thickness of the crystalline or amorphous metal oxide layers is about 10;
1 to about 500;
1 such that the thickness of the crystalline or amorphous metal oxide layers is lower than the thickness of the crystalline yttrium oxide layers.
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Specification