Anodization method for the production of one-dimensional (1D) nanoarrays of indium oxide

• US 10,443,147 B1
• Filed: 06/06/2018
• Issued: 10/15/2019
• Est. Priority Date: 06/06/2018
• Status: Active Grant

• Current Assignee: King Fahd University Of Petroleum And Minerals
• Original Assignee: King Fahd University Of Petroleum And Minerals
• Inventors: Qurashi, Ahsanulhaq, Khan, Ibrahim
• Primary Examiner(s): Marks, Jacob B
• Application Number:
  US16/001,188
• Time in Patent Office: 496 Days
• CPC Class Codes: C30B 29/16 Oxides
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: C30B 7/12 by electrolysis

Abstract

A method of forming a one-dimensional nanoarray of In₂O₃ nanowires on indium foil is disclosed. The nanowires of In₂O₃ have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In₂O₃ nanoarray may have a nanowire density of 200-300 nanowires per μm² indium foil and a band gap energy of 2.63-3.63 eV. The In₂O₃ nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

Claims

1. A method for producing an In₂O₃ nanoarray of nanowires on indium foil, comprising:

subjecting an electrochemical cell to 15-25 V, the electrochemical cell comprising;

a working electrode comprising indium foil in contact with an electrolyte solution and

a counter electrode in contact with the electrolyte solution,

wherein nanowires of In₂O₃ are grown on the indium foil, forming the In₂O₃ nanoarray,

wherein an end of each nanowire is attached to the indium foil, and

wherein the longitudinal axis of each nanowire is substantially perpendicular to the indium foil.

2. The method of claim 1, wherein the nanowires have substantially circular cross-sections.

3. The method of claim 1, wherein the nanowires have diameters of 30-50 nm and lengths of 100-200 nm.

4. The method of claim 1, wherein the nanowires comprise In₂O₃ in a cubic crystal phase.

5. The method of claim 1, wherein the In₂O₃ nanoarray has a nanowire density of 200-300 nanowires per μ

m² indium foil.

6. The method of claim 1, wherein the In₂O₃ nanoarray has a band gap energy of 2.63-3.63 eV.

7. The method of claim 1, wherein the electrolyte solution has a temperature of 20-30°

C.

8. The method of claim 1, wherein the electrolyte solution comprises polyethylene glycol at a weight percentage of 1-8 wt % relative to a total weight of the electrolyte solution.

9. The method of claim 1, wherein the electrolyte solution comprises one or more electrolytes at a concentration of 0.2-1.0 M.

10. The method of claim 1, wherein the electrolyte solution comprises at least one electrolyte selected from the group consisting of chromic acid, oxalic acid, sulfuric acid, phosphoric acid, ammonium fluoride, and sodium fluoride.

11. The method of claim 10, wherein the electrolyte solution comprises sodium fluoride.

12. The method of claim 1, wherein before the subjecting, the electrolyte solution is substantially free of an aqueous form of In.

13. The method of claim 1, wherein the electrolyte solution is stirred during the subjecting.

14. The method of claim 1, wherein the electrochemical cell further comprises a reference electrode.

15. The method of claim 14, wherein the reference electrode is a saturated calomel electrode.

16. The method of claim 1, wherein the counter electrode comprises gold, platinum, or carbon.

17. The method of claim 16, wherein the counter electrode comprises platinum.

18. The method of claim 1, wherein the counter electrode is in the form of a rod or wire.

19. The method of claim 1, wherein the electrochemical cell is subjected to a voltage that does not vary by more than 5% of an average value throughout the subjecting.

20. The method of claim 1, wherein the indium foil in contact with the electrolyte solution has a length to width ratio of 1:

1-2.5;

1.