Waveguides including a patterned dielectric layer

• US 10,444,433 B1
• Filed: 10/25/2018
• Issued: 10/15/2019
• Est. Priority Date: 10/25/2018
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Bian, Yusheng, Thomas, Abu, Jacob, Ajey Poovannummoottil, Giewont, Kenneth J., Nummy, Karen, Stricker, Andreas, Peng, Bo
• Primary Examiner(s): Smith, Chad H
• Application Number:
  US16/170,262
• Time in Patent Office: 355 Days
• Field of Search: None
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 6/1228 Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/136 by etching

Abstract

Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A tapered feature composed of a dielectric material is arranged over the waveguide. The tapered feature includes a sidewall that is angled relative to a longitudinal axis of the waveguide.

Claims

1. A structure comprising:

a substrate having a first region, a second region, and a third region between the first region and the second region;

a plurality of electronic components located in the second region of the substrate;

a waveguide having a longitudinal axis, the waveguide arranged in the first region, the second region, and the third region of the substrate; and

a first tapered feature arranged in the third region of the substrate over the waveguide, the first tapered feature comprised of a dielectric material, and the first tapered feature including a first sidewall that is angled relative to the longitudinal axis of the waveguide,

wherein the dielectric material is absent in the first region of the substrate, and the dielectric material fully covers the second region of the substrate.

2. The structure of claim 1 wherein the first tapered feature includes a second sidewall and a terminating end that joins the first sidewall with the second sidewall, and the terminating end of the first tapered feature is arranged over the waveguide.

3. The structure of claim 2 wherein the waveguide has a first width, and the terminating end has a second width that is less than the first width.

4. The structure of claim 2 wherein the waveguide has a first width, and the terminating end has a second width that is greater than the first width.

5. The structure of claim 1 wherein the first tapered feature includes a second sidewall and a terminating end that joins the first sidewall with the second sidewall, the terminating end of the first tapered feature is offset laterally from the longitudinal axis of the waveguide, the waveguide has a width, and the first sidewall of the first tapered feature extends from the terminating end at an angle fully across the width of the waveguide.

6. The structure of claim 1 wherein the waveguide has a width, and the first sidewall of the first tapered feature extends at an angle fully across the width of the waveguide.

7. The structure of claim 1 wherein the first sidewall is angled relative to the longitudinal axis of the waveguide at a first angle, and further comprising:

a second tapered feature arranged over the waveguide, the second tapered feature comprised of the dielectric material, the second tapered feature abutted with the first tapered feature along the longitudinal axis of the waveguide, and the second tapered feature having a second sidewall that is angled relative to the longitudinal axis of the waveguide at a second angle that is less than the first angle.

8. The structure of claim 1 wherein the first tapered feature includes a second sidewall and a terminating end that joins the first sidewall with the second sidewall, and further comprising:

a bend abutted with the terminating end of the first tapered feature, the bend comprised of the dielectric material, and the bend having a curvature relative to the longitudinal axis of the waveguide.

9. The structure of claim 1 wherein the waveguide is comprised of a single-crystal semiconductor material, and further comprising:

a first dielectric layer arranged between the waveguide and the first tapered feature,

wherein the first dielectric layer is comprised of an oxide of silicon, and the dielectric material is comprised of silicon nitride.

10. The structure of claim 9 further comprising:

a second dielectric layer arranged over the first tapered feature,

wherein the second dielectric layer is comprised of an oxide of silicon.

11. The structure of claim 1 wherein the first tapered feature is symmetrically arranged relative to the longitudinal axis of the waveguide.

12. The structure of claim 1 wherein the first tapered feature is asymmetrically arranged relative to the longitudinal axis of the waveguide.

13. A method comprising:

forming a waveguide on a substrate that has a first region, a second region, and a third region between the first region and the second region, wherein the waveguide is arranged in the first region, the second region, and the third region of the substrate;

depositing a dielectric material over the waveguide and the first region, the second region, and the third region of the substrate; and

patterning the dielectric material to define a tapered feature in the third region of the substrate that is arranged over the waveguide and that includes a sidewall that is angled relative to a longitudinal axis of the waveguide,

wherein the dielectric material is removed from the first region by the patterning of the dielectric material, a plurality of electronic components are located in the second region of the substrate, and the dielectric material fully covers the second region of the substrate.

14. The method of claim 13 wherein the waveguide is comprised of a single-crystal semiconductor material, and further comprising:

forming a dielectric layer arranged between the waveguide and the tapered feature,

wherein the dielectric layer is comprised of an oxide of silicon, and the dielectric material is comprised of silicon nitride.

15. The method of claim 13 wherein the waveguide is formed with a width, and the tapered feature is patterned such that the sidewall extends at an angle fully across the width of the waveguide.

16. The method of claim 13 wherein the tapered feature is symmetrically arranged relative to the longitudinal axis of the waveguide.

17. The method of claim 13 wherein the tapered feature is asymmetrically arranged relative to the longitudinal axis of the waveguide.