Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

• US 10,444,628 B2
• Filed: 12/07/2016
• Issued: 10/15/2019
• Est. Priority Date: 12/24/2015
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Kori, Daisuke, Ogihara, Tsutomu, Watanabe, Takeru, Taneda, Yoshinori, Maeda, Kazunori
• Primary Examiner(s): Angebranndt, Martin J
• Application Number:
  US15/371,815
• Publication Number:
  US 20170184968A1
• Time in Patent Office: 1,042 Days
• Field of Search: None
• CPC Class Codes: C07C 2603/12 only one five-membered ring
• CPC Class Codes: C07C 2603/18 Fluorenes; Hydrogenated fluorenes
• CPC Class Codes: C07C 2603/40 containing four condensed rings
• CPC Class Codes: C07C 2603/52 containing five condensed rings
• CPC Class Codes: C07C 2603/54 containing more than five condensed rings
• CPC Class Codes: C07C 39/23 polycyclic, containing six-membered aromatic rings and other rings, with unsaturation outside the aromatic rings
• CPC Class Codes: C07C 43/215 having unsaturation outside the six-membered aromatic rings
• CPC Class Codes: C07C 43/285 having unsaturation outside the six-membered aromatic rings
• CPC Class Codes: C07C 49/653 polycyclic
• CPC Class Codes: C07C 49/683 having unsaturation outside the aromatic rings
• CPC Class Codes: C07D 311/92 Naphthopyrans; Hydrogenated naphthopyrans
• CPC Class Codes: C09D 5/008 Temporary coatings C09D5/20 takes precedence
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 7/0045 with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
• CPC Class Codes: G03F 7/039 Macromolecular compounds which are photodegradable, e.g. positive electron resists G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023
• CPC Class Codes: G03F 7/0752 in non photosensitive layers or as additives, e.g. for dry lithography
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/16 Coating processes; Apparatus therefor applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: G03F 7/2041 : in the presence of a fluid, e.g. immersion; using fluid cooling means
• CPC Class Codes: G03F 7/322 : Aqueous alkaline compositions
• CPC Class Codes: H01L 21/0274 : Photolithographic processes
• CPC Class Codes: H01L 21/0332 : characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3081 : characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 : characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31116 : by dry-etching
• CPC Class Codes: H01L 21/31138 : by dry-etching

Abstract

A compound for forming an organic film shown by the formula (1A),
RX)_m1  (1A)
wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2≤m1≤10,

wherein X² represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X³ represents a group shown by the formula (1C); and n5 represents 0, 1, or 2,

wherein R¹⁰ represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

Claims

1. A compound for forming an organic film shown by the formula (1A),

RX)_m1 

 

(1A)

wherein m1 is 2, 4 or 6; and

formula (1A) is at least one selected from the following compounds;

2. The compound for forming an organic film according to claim 1, wherein the compound has a molecular weight of 2,500 or less, the molecular weight being calculated on the basis of the formula (1A).

3. A composition for forming an organic film, comprising the compound according to claim 1 and an organic solvent.

4. The composition for forming an organic film according to claim 3, further comprising either or both of a compound shown by the formula (2A) and a compound shown by the formula (3A),

RX′

)_m2 

 

(2 A)

wherein R represents a single bond or an organic group having 1 to 50 carbon atoms;

X′

represents a group shown by the formula (2B); and

m2 represents an integer satisfying 1≤

m2≤

5,

5. The composition for forming an organic film according to claim 3, wherein the organic solvent is a mixture of one or more organic solvents having a boiling point of lower than 180°

C. and one or more organic solvents having a boiling point of 180°

C. or higher.

6. A method for forming an organic film that functions as an organic planarizing film used in a semiconductor apparatus manufacturing process, the method comprising:

applying the composition for forming an organic film according to claim 3 on a substrate to be processed by spin coating; and

heating the substrate, on which the composition has been applied, at 100°

C. to 600°

C. for 10 to 600 seconds to form a cured film.

7. The method for forming an organic film according to claim 6, wherein the substrate to be processed has steps or a structure with a height of 30 nm or more.

8. A method for forming an organic film that functions as an organic planarizing film used in a semiconductor apparatus manufacturing process, the method comprising:

applying the composition for forming an organic film according to claim 3 on a substrate to be processed by spin coating; and

heating the substrate, on which the composition has been applied, under an atmosphere having an oxygen concentration of 0.1% to 21% to form a cured film.

9. A patterning process comprising:

forming an organic film on a body to be processed from the composition for forming an organic film according to claim 3;

forming a resist underlayer film on the organic film from a resist underlayer film composition containing a silicon atom;

forming a resist upper layer film on the resist underlayer film from a resist upper layer film composition composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the resist underlayer film by etching using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching using the resist underlayer film having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

10. The patterning process according to claim 9, the circuit pattern is formed by a photolithography with a wavelength ranging from 10 nm to 300 nm, a direct drawing with electron beam, a nanoimprinting, or a combination thereof.

11. The patterning process according to claim 9, the circuit pattern is developed by alkaline development or development with an organic solvent.

12. The patterning process according to claim 9, wherein the body to be processed is a semiconductor apparatus substrate or the semiconductor apparatus substrate coated with any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film.

13. The patterning process according to claim 12, wherein the metal of the body to be processed is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum, or an alloy thereof.

14. A patterning process comprising:

forming an organic film on a body to be processed from the composition for forming an organic film according to claim 3;

forming a resist underlayer film on the organic film from a resist underlayer film composition containing a silicon atom;

forming an organic antireflective film on the resist underlayer film;

forming a resist upper layer film on the organic antireflective film from a resist upper layer film composition composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic antireflective film and the resist underlayer film by etching using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching using the resist underlayer film having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

15. A patterning process comprising:

forming an organic film on a body to be processed from the composition for forming an organic film according to claim 3;

forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;

forming a resist upper layer film on the inorganic hard mask from a resist upper layer film composition composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the inorganic hard mask by etching using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching using the inorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.

16. The patterning process according to claim 15, wherein the inorganic hard mask is formed by a CVD method or an ALD method.

17. A patterning process comprising:

forming an organic film on a body to be processed from the composition for forming an organic film according to claim 3;

forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the organic film;

forming an organic antireflective film on the inorganic hard mask;

forming a resist upper layer film on the organic antireflective film from a resist upper layer film composition composed of a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic antireflective film and the inorganic hard mask by etching using the resist upper layer film having the formed circuit pattern as a mask;

transferring the pattern to the organic film by etching using the inorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.