Memory controller with at least one address segment defined for which data is striped across flash memory dies, with a common address offset being used to obtain physical addresses for the data in each of the dies

• US 10,445,229 B1
• Filed: 06/13/2017
• Issued: 10/15/2019
• Est. Priority Date: 01/28/2013
• Status: Active Grant

• Current Assignee: Radian Memory Systems, Inc.
• Original Assignee: Radian Memory Systems, Inc.
• Inventors: Kuzmin, Andrey V., Wayda, James G.
• Primary Examiner(s): Bataille, Pierre Miche
• Application Number:
  US15/621,888
• Time in Patent Office: 854 Days
• Field of Search: 711162, 711112
• CPC Class Codes: G06F 11/1068 in sector programmable memories, e.g. flash disk G06F11/1072 takes precedence
• CPC Class Codes: G06F 11/1072 in multilevel memories
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 12/10 Address translation
• CPC Class Codes: G06F 16/1847 specifically adapted to static storage, e.g. adapted to flash memory or SSD
• CPC Class Codes: G06F 2015/766 Flash EPROM
• CPC Class Codes: G06F 2212/2022 Flash memory
• CPC Class Codes: G06F 2212/7201 Logical to physical mapping or translation of blocks or pages
• CPC Class Codes: G06F 2212/7207 management of metadata or control data
• CPC Class Codes: G06F 2212/7208 Multiple device management, e.g. distributing data over multiple flash devices
• CPC Class Codes: G06F 3/061 Improving I/O performance
• CPC Class Codes: G06F 3/0611 in relation to response time
• CPC Class Codes: G06F 3/0638 Organizing or formatting or addressing of data
• CPC Class Codes: G06F 3/0659 Command handling arrangements, e.g. command buffers, queues, command scheduling
• CPC Class Codes: G06F 3/0679 Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
• CPC Class Codes: G06F 3/0688 Non-volatile semiconductor memory arrays
• CPC Class Codes: G06F 8/654 using techniques specially adapted for alterable solid state memories, e.g. for EEPROM or flash memories

Abstract

This disclosure provides for improvements in managing multi-drive, multi-die or multi-plane NAND flash memory. In one embodiment, the host directly assigns physical addresses and performs logical-to-physical address translation in a manner that reduces or eliminates the need for a memory controller to handle these functions, and initiates functions such as wear leveling in a manner that avoids competition with host data accesses. A memory controller optionally educates the host on array composition, capabilities and addressing restrictions. Host software can therefore interleave write and read requests across dies in a manner unencumbered by memory controller address translation. For multi-plane designs, the host writes related data in a manner consistent with multi-plane device addressing limitations. The host is therefore able to “plan ahead” in a manner supporting host issuance of true multi-plane read commands.

Claims

1. A memory controller integrated circuit to control flash memory, the flash memory comprising flash memory dies, the flash memory dies each comprising structures at a common hierarchical level, the memory controller integrated circuit comprising:

a host interface to receive read requests and associated addresses from a host;

a memory interface to send memory commands to the flash memory dies in response to the read requests received from the host;

logic to control satisfaction of the memory commands in the flash memory dies in response to the read requests received from the host;

wherein the logic comprises at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit;

wherein the logic, for at least a given one of the read requests, is to interpret the given one as directed to data stored across two or more of the flash memory dies, said logic to process the address associated with the given one to identify a common address offset to be independently applied to each of the two or more of the flash memory dies; and

wherein the logic is to direct the memory commands such that each of the two or more of the flash memory dies is provided with a physical address, dependent on identification of the common address offset, with which to retrieve the data stored across the two or more of the flash memory dies.

2. The memory controller integrated circuit of claim 1, wherein the common hierarchical level is erase units of the flash memory, and wherein the common address offset corresponds to the common hierarchical level, such that the two or more of the flash memory dies are to access paired erase units, each of the paired erase units respective to a die of the flash memory dies, each of the paired erase units selected in dependence on the common address offset.

3. The memory controller integrated circuit of claim 2, wherein the logic is to perform logical-to-physical address translation for each of the two or more of the flash memory dies, and wherein the flash memory controller integrated circuit is to direct respective commands to each die of the two or more of the flash memory dies, such that each respective command is to convey a respective page address corresponding to one of the paired erase units.

4. The memory controller integrated circuit of claim 1, wherein the logic is to interpret first ones of the read requests received from the host as directed to data stored across a first number of the flash memory dies, wherein the logic is to interpret second ones of the read requests received from the host to data stored across a second number of flash memory dies, the second number being different than the first number, each of the first number and the second number being one or more, and wherein the logic is to direct memory commands to the first number of the flash memory dies or the second number of the flash memory dies in response to whether a particular host request is interpreted as being to directed to the first ones or the second ones.

5. The memory controller integrated circuit of claim 4, wherein the first number and the second number correspond to mutually-exclusive sets of the flash memory dies.

6. The memory controller integrated circuit of claim 4, wherein the first ones of the read requests are directed to a first address space in the flash memory, wherein the second ones of the read requests are directed to a second address space in the flash memory, and wherein the memory controller integrated circuit further comprises logic to track a need for flash memory maintenance operations on an independent basis in each of the first address space and the second address space and to responsively control performance of the flash memory maintenance operations, the logic to track and to responsively perform also comprising at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit.

7. The memory controller integrated circuit of claim 4, wherein the first ones of the read requests are directed to a first address space in the flash memory, wherein the second ones of the read requests are directed to a second address space in the flash memory, and wherein the memory controller integrated circuit further comprises logic to track a need for, and to control performance of, garbage collection on an independent basis in each of the first address space and the second address space, the logic to track and to perform also comprising at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit.

8. The memory controller integrated circuit of claim 4, wherein the first ones of the read requests are directed to a first address space in the flash memory, wherein the second ones of the read requests are directed to a second address space in the flash memory, and wherein the memory controller integrated circuit is to, on a programmable basis, associate the first address space and the second address space with different numbers of the flash memory dies.

9. The memory controller integrated circuit of claim 8, further comprising logic to transmit to the host information identifying the number of the flash memory dies forming the nonvolatile memory, wherein the association of the first address space and the second address space with the different number of flash memory dies is to be programmably-defined in response to the transmission to the host of said information, and wherein the logic to transmit also comprises at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit.

10. The memory controller integrated circuit of claim 4, wherein the memory controller integrated circuit is to map a first set of the associated addresses to the first memory space and a second set of the associated addresses to the second memory space, and is to direct the given one to the two or more flash memory dies in dependence on whether the address associated with the given one corresponds to an address in the first set or the second set.

11. A storage drive, comprising:

flash memory comprising flash memory dies, the flash memory dies each comprising structures at a common hierarchical level; and

a memory controller integrated circuit to control the flash memory, the memory controller integrated circuit comprising

a host interface to receive read requests and associated addresses from a host,

a memory interface to send memory commands to the flash memory dies in response to the read requests received from the host, and

logic to control satisfaction of the memory commands in the flash memory dies in response to the read requests received from the host;

wherein the logic comprises at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit;

wherein the logic, for at least a given one of the read requests, is to interpret the given one as directed to data stored across two or more of the flash memory dies, said logic to process the address associated with the given one to identify a common address offset to be independently applied to each of the two or more of the flash memory dies; and

wherein the logic is to direct the memory commands such that each of the two or more of the flash memory dies is provided with a physical address, dependent on identification of the common address offset, with which to retrieve the data stored across the two or more of the flash memory dies.

12. The storage drive of claim 11, wherein the common hierarchical level is erase units of the flash memory, and wherein the common address offset corresponds to the common hierarchical level, such that the two or more of the flash memory dies are to access paired erase units, each of the paired erase units respective to a die of the flash memory dies, each of the paired erase units selected in dependence on the common address offset.

13. The storage drive of claim 12, wherein the logic is to perform logical-to-physical address translation for each of the two or more of the flash memory dies, and wherein the flash memory controller integrated circuit is to direct respective commands to each die of the two or more of the flash memory dies, such that each respective command is to convey a respective page address corresponding to one of the paired erase units.

14. The storage drive of claim 11, wherein the logic is to interpret first ones of the read requests received from the host as directed to data stored across a first number of the flash memory dies, wherein the logic is to interpret second ones of the read requests received from the host to data stored across a second number of flash memory dies, the second number being different than the first number, each of the first number and the second number being one or more, and wherein the logic is to direct the memory commands to the first number of the flash memory dies or the second number of the flash memory dies in response whether a particular host request is directed to the first ones or the second ones.

15. The storage drive of claim 14, wherein the first number and the second number correspond to mutually-exclusive sets of the flash memory dies.

16. The storage drive of claim 14, wherein the first ones of the read requests are directed to a first address space in the flash memory, wherein the second ones of the read requests are directed to a second address space in the flash memory, and wherein the memory controller integrated circuit further comprises logic to track a need for flash memory maintenance operations on an independent basis in each of the first address space and the second address space and to responsively control performance of the flash memory maintenance operations, the logic to track and to responsively control performance also comprising at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit.

17. The storage drive of claim 14, wherein the first ones of the read requests are directed to a first address space in the flash memory, wherein the second ones of the read requests are directed to a second address space in the flash memory, and wherein the memory controller integrated circuit further comprises logic to track a need for, and to control performance of, garbage collection on an independent basis in each of the first address space and the second address space, the logic to track and to control performance also comprising at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit.

18. The storage drive of claim 14, wherein the first ones of the read requests are directed to a first address space in the flash memory, wherein the second ones of the read requests are directed to a second address space in the flash memory, and wherein the memory controller integrated circuit is to, on a programmable basis, associate the first address space and the second address space with different numbers of the flash memory dies.

19. The storage drive of claim 18, further comprising logic to transmit to the host information identifying the number of the flash memory dies forming the nonvolatile memory, wherein the association of the first address space and the second address space with the different number of flash memory dies is to be programmably-defined in response to the transmission to the host of said information, and wherein the logic to transmit also comprises at least one of (1) hardware circuit elements or (2) instructions stored on non-transitory storage which, when executed, are to control circuitry of said memory controller integrated circuit.

20. The storage drive of claim 14, wherein the memory controller integrated circuit is to map a first set of the associated addresses to the first memory space and a second set of the associated addresses to the second memory space, and is to direct the given one to the two or more flash memory dies in dependence on whether the address associated with the given one corresponds to an address in the first set or the second set.