Magnetic random access memory structures, integrated circuits, and methods for fabricating the same
First Claim
1. A spin transfer torque magnetic random access memory structure having a perpendicular magnetic orientation, comprising:
- a bottom electrode;
a seed layer over the bottom electrode;
a hard layer over the seed layer;
a magnetically continuous transition layer over the hard layer;
a reference layer over the magnetically continuous transition layer;
a tunnel barrier layer over the reference layer;
a storage layer formed over the tunnel barrier layer, wherein the reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation; and
a top electrode.
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Abstract
Spin transfer torque magnetic random access memory structures, integrated circuits, and methods for fabricating integrated circuits are provided. An exemplary spin transfer torque magnetic random access memory structure has a perpendicular magnetic orientation, and includes a bottom electrode, a seed layer over the bottom electrode, a hard layer over the seed layer, a magnetically continuous transition layer over the hard layer, a reference layer over the magnetically continuous transition layer, a tunnel barrier layer over the reference layer, a storage layer formed over the tunnel barrier layer, and a top electrode. The reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation.
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Citations
20 Claims
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1. A spin transfer torque magnetic random access memory structure having a perpendicular magnetic orientation, comprising:
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a bottom electrode; a seed layer over the bottom electrode; a hard layer over the seed layer; a magnetically continuous transition layer over the hard layer; a reference layer over the magnetically continuous transition layer; a tunnel barrier layer over the reference layer; a storage layer formed over the tunnel barrier layer, wherein the reference layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation; and a top electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A spin transfer torque magnetic random access memory structure having a perpendicular magnetic orientation, comprising:
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a bottom electrode; a seed layer over the bottom electrode; an anti-parallel layer over the seed layer; a non-magnetic synthetic anti-ferromagnetic (SAF) coupling layer over the anti-parallel layer; a magnetic hard layer disposed on the non-magnetic SAF coupling layer, wherein the magnetic hard layer has a thickness of from about 6 A to about 35 A; a tunnel barrier layer over the magnetic hard layer; a storage layer formed over the tunnel barrier layer, wherein the magnetic hard layer, the tunnel barrier layer, and the storage layer form a magnetic tunnel junction (MTJ) element with a perpendicular orientation; and a top electrode. - View Dependent Claims (15, 16, 17, 18)
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19. A method for fabricating an integrated circuit, the method comprising:
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forming a bottom electrode; forming a seed layer over the bottom electrode; forming an anti-parallel layer over the seed layer; forming a non-magnetic synthetic anti-ferromagnetic (SAF) coupling layer over the magnetic SAF layer; forming a magnetic layer directly on the SAF coupling layer, wherein; the magnetic layer is a magnetically continuous transition layer, wherein the magnetically continuous transition layer is an alloy or wherein the magnetically continuous transition layer includes a magnetic sublayer and a non-magnetic sublayer;
orthe magnetic layer is a magnetic hard layer, wherein the magnetic hard layer is a single magnetic layer or a composite structure of magnetic and non-magnetic sublayers; forming a tunnel barrier layer over the magnetic layer; forming a storage layer over the tunnel barrier layer; and forming a top electrode over the storage layer. - View Dependent Claims (20)
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Specification