Temperature sensitive NAND programming

• US 10,446,237 B1
• Filed: 06/29/2018
• Issued: 10/15/2019
• Est. Priority Date: 06/29/2018
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Luo, Xiangang, Huang, Jianmin, Hoei, Jung Sheng, Singidi, Harish Reddy, Luo, Ting, Vashi, Ankit
• Primary Examiner(s): Tran, Michael T
• Application Number:
  US16/024,316
• Time in Patent Office: 473 Days
• Field of Search: 36518517, 36518524
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 11/5671 using charge trapping in an insulator
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells
• CPC Class Codes: G11C 16/349 Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
• CPC Class Codes: G11C 16/3495 Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

Devices and techniques temperature sensitive NAND programming are disclosed herein. A device controller can receive a command to write data to a component of the device. A temperature can be obtained in response to the command, and the temperature can be combined with a temperature compensation value to calculate a verification level. The command can then be executed in accordance with the verification level.

Claims

1. A device for temperature sensitive NAND programming, the device comprising:

a NAND array that includes a NAND component;

volatile memory that includes a temperature compensation value; and

a controller configured to;

receive a command to write data to the NAND;

obtain a temperature corresponding to the NAND component in response to receipt of the command;

calculate a verification level from the temperature compensation value and the temperature; and

execute the command to write data to the NAND component in accordance with the verification level, wherein, to execute the command to write data to the NAND component in accordance with the verification level, the controller is configured to iteratively;

program the NAND component to instill a NAND component value; and

check the NAND component value against the verification level until the NAND component value passes the verification level, wherein the NAND component value passes the verification level when a read level generated according to the temperature compensation value results in a successful read of the NAND component value.

2. The device of claim 1, wherein the temperature compensation value is specific to the NAND component.

3. The device of claim 1, wherein the controller is configured to calculate the temperature compensation value from the temperature, including:

a quantification of the temperature into one range of a set of temperature ranges; and

a selection of the temperature compensation value using the one range.

4. The device of claim 3, wherein, to select the temperature compensation, the controller is configured to:

identify an intermediate temperature compensation value using the one range; and

modify the intermediate temperature compensation value based on a program-erase metric of the NAND component to produce the temperature compensation value.

5. The device of claim 4, wherein the program-erase metric is a count of program and erase cycles performed on the NAND component.

6. A method for temperature sensitive NAND programming, the method comprising:

receiving, at a controller of a NAND device, a command to write data to a NAND component in the NAND device;

obtaining a temperature corresponding to the NAND component in response to receiving the command;

calculating a verification level from a temperature compensation value and the temperature; and

executing the command to write data to the NAND component in accordance with the verification level, wherein executing the command to write data to the NAND component in accordance with the verification level includes iteratively;

programming the NAND component to instill a NAND component value; and

checking the NAND component value against the verification level until the NAND component value passes the verification level, wherein the NAND component value passes the verification level when a read level generated according to the temperature compensation value results in a successful read of the NAND component value.

7. The method of claim 6, wherein the temperature compensation value is specific to the NAND component.

8. The method of claim 6, comprising calculating the temperature compensation value from the temperature, including:

quantifying the temperature into one range of a set of temperature ranges; and

selecting the temperature compensation value using the one range.

9. The method of claim 8, wherein selecting the temperature compensation value using the one range includes:

identifying an intermediate temperature compensation value using the one range; and

modifying the intermediate temperature compensation value based on a program-eras metric of the NAND component to produce the temperature compensation value.

10. The method of claim 9, wherein the program-erase metric is a count of program and erase cycles performed on the NAND component.

11. A non-transitory machine readable medium including instructions for temperature sensitive NAND programming, the instructions, when executed by processing circuitry, cause the processing circuitry to perform operations comprising:

receiving, at a controller of a NAND device, a command to write data to a NAND component in the NAND device;

obtaining a temperature corresponding to the NAND component in response to receiving the command;

calculating a verification level from a temperature compensation value and the temperature; and

executing the command to write data to the NAND component in accordance with the verification level, wherein executing the command to write data to the NAND component in accordance with the verification level includes iteratively;

programming the NAND component to instill a NAND component value; and

checking the NAND component value against the verification level until the NAND component value passes the verification level, wherein the NAND component value passes the verification level when a read level generated according to the temperature compensation value results in a successful read of the NAND component value.

12. The machine readable medium of claim 11, wherein the temperature compensation value is specific to the NAND component.

13. The machine readable medium of claim 11, comprising calculating the temperature compensation value from the temperature, including:

quantifying the temperature into one range of a set of temperature ranges; and

selecting the temperature compensation value using the one range.

14. The machine readable medium of claim 13, wherein selecting the temperature compensation value using the one range includes:

identifying an intermediate temperature compensation value using the one range; and

modifying the intermediate temperature compensation value based on a program-erase metric of the NAND component to produce the temperature compensation value.

15. The machine readable medium of claim 14, wherein the program-erase metric is a count of program and erase cycles performed on the NAND component.