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Thick pseudomorphic nitride epitaxial layers

  • US 10,446,391 B2
  • Filed: 11/17/2011
  • Issued: 10/15/2019
  • Est. Priority Date: 01/26/2007
  • Status: Active Grant
First Claim
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1. A light-emitting device comprising:

  • a single-crystal aluminum nitride substrate having opposed top and bottom surfaces;

    disposed over the top surface of the substrate, a strained bottom contact layer comprising doped AlnGa1-nN, n being less than 1, wherein the strained bottom contact layer is pseudomorphically strained with respect to the substrate, such that the strained bottom contact layer is less than 20% relaxed to its innate lattice parameter;

    disposed over the bottom contact layer, a multiple-quantum well layer comprising a plurality of periods each comprising a strained AlxGa1-xN barrier and a strained AlyGa1-yN quantum well, wherein (i) x and y are different by an amount facilitating confinement of electrons and holes in the multiple-quantum well layer and (ii) y is selected such that an emission wavelength of the light-emitting device is in the range of 210 nm to 320 nm;

    disposed over the multiple-quantum well layer, a doped top contact layer comprising AlzGa1-zN providing electrical contact to at least one layer therebelow; and

    disposed over the top contact layer, a metallic contact layer.

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