Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures

• US 10,446,405 B2
• Filed: 02/23/2018
• Issued: 10/15/2019
• Est. Priority Date: 02/23/2017
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Sherpa, Sonam D., Ranjan, Alok
• Primary Examiner(s): Lu, Jiong-Ping
• Application Number:
  US15/904,157
• Publication Number:
  US 20180277386A1
• Time in Patent Office: 599 Days
• Field of Search: None
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/0338 Process specially adapted to improve the resolution of the mask
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/311 Etching the insulating layers by chemical or physical means H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/3213 Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/768 Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Abstract

A method of preparing a self-aligned block (SAB) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. The method further includes forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing N, F, O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third material.

Claims

1. A method of preparing a self-aligned block (SAB) structure, comprising:

providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on first and second side walls of the first material in which the first and second side walls are spaced from each other in a lateral direction such that the first material is between the second material on the first and second side walls, and a third material spaced laterally from the first and second side walls of the first material and containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material;

forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas;

exposing the first, second, and third materials on the substrate to the first chemical mixture such that after exposing to the first chemical mixture a depth within the first material is hydrogenated;

thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing S, F, and optionally a noble element; and

exposing the first, second, and third materials on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third materials and to remove the first material while the second and third materials remain after exposing to the second plasma-excited process gas.

2. The method of claim 1, wherein the first process gas contains H₂.

3. The method of claim 1, wherein the first process gas consists of H₂.

4. The method of claim 1, wherein the first process gas consists of H₂ and Ar.

5. The method of claim 1, wherein the second process gas contains SF₆ and Ar.

6. The method of claim 1, wherein the second process gas consists of SF₆ and Ar.

7. The method of claim 1, wherein the first chemical mixture contains hydrogen ions.

8. The method of claim 1, wherein the second chemical mixture contains substantially charge-neutral species.

9. The method of claim 1, wherein the step of providing a substrate includes providing the second material as sidewall spacers on vertical portions of the first and second side walls and wherein the exposing to the second plasma removes the first material located between the sidewall spacers but not the sidewall spacers.

10. The method of claim 1, wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using a capacitively coupled plasma source containing an upper plate electrode, and a lower plate electrode supporting the substrate.

11. The method of claim 1, wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using an inductively coupled plasma source containing an inductive element, and a lower plate electrode supporting the substrate.

12. The method of claim 1, wherein the plasma excitation of the first process gas or the second process gas includes generating plasma using a remote plasma source that creates a high radical to ion flux ratio.

13. The method of claim 1, further comprising:

repeating the steps of forming the first chemical mixture, exposing the first material to the first chemical mixture, forming the second chemical mixture, and exposing the first material to the second plasma-excited process gas to incrementally remove additional portions of the first material until a layer positioned under the first material is exposed.

14. The method of claim 1, wherein the first material is removed at an etch selectivity of greater than 100-to-1 relative to the second and third materials.

15. The method of claim 1, wherein the raised feature is a mandrel in a self-aligned multi-patterning process.

16. The method of claim 15, wherein an aspect ratio of the raised feature exceeds 10.

17. The method of claim 1, wherein:

the providing a substrate includes providing a substrate in which the first material fills a region between the second material on the first and second side walls before the exposure to the first chemical mixture, and the third material extends along a portion of a side wall of the second material before exposure to the first chemical mixture;

the first chemical mixture consists essentially of hydrogen and optionally a noble gas; and

the exposing the first, second and third materials to the first chemical mixture and the exposing the first, second and third materials to the second plasma-excited process gas are alternatively repeatedly performed to remove the first material until a layer positioned under the first material is exposed, and after the layer positioned under the first material is exposed, the second material and the third material remain on the substrate.

18. A method of preparing a self-aligned block (SAB) structure, comprising:

providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on first and second side walls of the first material in which the first and second side walls are spaced from each other in a lateral direction such that the first material is between the second material on the first and second side walls, and a third material spaced laterally from the first and second side walls of the first material and containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material;

forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas;

exposing the first, second, and third materials on the substrate to the first chemical mixture such that after exposing to the first chemical mixture a depth within the first material is hydrogenated;

thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing a high fluorine content molecule, and optionally a noble element, wherein the ratio of fluorine to other atomic elements of the high fluorine content molecule exceeds unity; and

exposing the first, second, and third materials on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second and third materials and to remove the first material while the second and third materials remain after exposing to the second plasma-excited process gas.

19. The method of claim 18, wherein:

the providing a substrate includes providing a substrate in which the first material fills a region between the second material on the first and second side walls before the exposure to the first chemical mixture, and the third material extends along a portion of a side wall of the second material before exposure to the first chemical mixture;

the first chemical mixture consists essentially of hydrogen and optionally a noble gas; and

the exposing the first, second and third materials to the first chemical mixture and the exposing the first, second and third materials to the second plasma-excited process gas are alternatively repeatedly performed to remove the first material until a layer positioned under the first material is exposed, and after the layer positioned under the first material is exposed, the second material and the third material remain on the substrate.