High-density semiconductor device

• US 10,446,406 B2
• Filed: 05/03/2017
• Issued: 10/15/2019
• Est. Priority Date: 11/28/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chou, Lei-Chun, Chen, Chih-Liang, Lai, Chih-Ming, Young, Charles Chew-Yuen, Tseng, Chin-Yuan, Chen, Hsin-Chih, Ju, Shi Ning, Tzeng, Jiann-Tyng, Sio, Kam-Tou, Liu, Ru-Gun, Lin, Wei-Cheng, Lin, Wei-Liang
• Primary Examiner(s): Jahan, Bilkis
• Assistant Examiner(s): Barzykin, Victor V
• Application Number:
  US15/585,289
• Publication Number:
  US 20180151381A1
• Time in Patent Office: 895 Days
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Claims

1. A method of manufacturing a semiconductor device, the method comprising:

depositing a first material on a substrate;

forming a mandrel above the substrate;

depositing a spacer material on a sidewall of the mandrel;

removing the mandrel, thereby leaving a spacer;

forming a second material on a top surface and opposite first and second sidewalls of the spacer;

etching the second material on the first sidewall of the spacer to expose a portion of the first material;

removing the exposed portion of the first material to expose a portion of the substrate;

depositing on the exposed portion of the substrate a third material that has an etch selectivity different from an etch selectively of the first material;

depositing a second spacer material on the first and third materials; and

etching the substrate using the second spacer material as an etch mask to form a fin under the first material and a fin under the third material.

2. The method of claim 1, further comprising converting the second material on the top surface and the second sidewall of the spacer into a fourth material that has an etch selectivity different from an etch selectivity of the second material.

3. The method of claim 2, wherein converting the second material on the top surface and the second sidewall of the spacer into the fourth material includes implanting ions in the second material on the top surface and the second sidewall of the spacer.

4. The method of claim 2, wherein converting the second material on the top surface and the second sidewall of the spacer into the fourth material includes tilting the semiconductor device at a tilt angle.

5. The method of claim 1, further comprising:

etching back the third material to a height of the first material.

6. The method of claim 1, wherein etching the substrate includes forming a plurality of the fins under the first material and a plurality of the fins under the third material such that the fins under the first material and the fins under the third material are alternately arranged along the length of the substrate.

7. The method of claim 1, further comprising fabricating a transistor that includes one of the fins.

8. A method of manufacturing a semiconductor device, the method comprising:

forming above a substrate a spacer that has opposite first and second sidewalls;

depositing a first material on the first and second sidewalls of the spacer;

depositing a spacer material on the first material;

converting the first material on the second sidewall of the spacer into a second material that has an etch selectivity different from an etch selectively of the first material; and

etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

9. The method of claim 8, wherein forming the spacer includes

forming a mandrel above the substrate,

depositing a second spacer material on a sidewall of the mandrel, and

removing the mandrel, thereby leaving the spacer.

10. The method of claim 8, wherein depositing the first material includes

depositing the first material over the substrate and the spacer, and

etching back the first material to a height lower than a height of the spacer.

11. The method of claim 8, wherein converting the first material on the second sidewall of the spacer into the second material includes implanting ions in the first material on the second sidewall of the spacer.

12. The method of claim 8, wherein converting the first material on the second sidewall of the spacer into the second material includes tilting the semiconductor device at a tilt angle.

13. The method of claim 8, wherein etching the substrate includes forming a plurality of the fins under the first material and a plurality of the fins under the second material such that the fins under the first material and the fins under the second material are alternately arranged along the length of the substrate.

14. The method of claim 8, further comprising fabricating a transistor that includes one of the fins.

15. A semiconductor device, the comprising:

a substrate;

a first material formed on the substrate;

a second material formed on the substrate;

a plurality of fins formed from the substrate under the first and second materials;

wherein the first and second materials are formed on the substrate by (1) forming above the substrate a spacer that has opposite first and second sidewalls, (2) depositing the first material on the first and second sidewalls of the spacer, (3) depositing a spacer material on the first material, (4) converting the first material on the second sidewall of the spacer into the second material, the second material having an etch selectivity different from an etch selectively of the first material; and

wherein the plurality of fins are formed by etching the substrate using the spacer material as an etch mask.

16. The semiconductor device of claim 15, wherein converting the first material on the second sidewall of the spacer into the second material includes implanting ions in the first material on the second sidewall of the spacer.

17. The semiconductor device of claim 15, wherein converting the first material on the second sidewall of the spacer into the second material includes tilting the semiconductor device at a tilt angle.

18. The semiconductor device of claim 15, wherein the plurality of fins include a first plurality of fins under the first material and a second plurality of fins under the second material such that the first plurality of fins and the second plurality of fins are alternately arranged along the length of the substrate.

19. The semiconductor device of claim 18, wherein the fins under the first material have a different width than a width of the fins under the second material.

20. The semiconductor device of claim 18, wherein none of the fins under the first material are collinear with the fins under the second material.