Packaged integrated circuit having stacked die and method for therefor
First Claim
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1. A packaged integrated circuit (IC) device comprising:
- a first IC die;
a first inductor in the first IC die;
a first layer of adhesive on a first major surface of the first IC die;
an isolation layer over the first layer of adhesive;
a second layer of adhesive on the isolation layer;
a second IC die on the second layer of adhesive, wherein a first major surface of the second IC die is in direct contact with the second layer of adhesive;
a second inductor in the second IC die aligned to communicate with the first inductor, wherein the isolation layer extends beyond a first edge of the second IC die wherein a creepage distance between the first edge of the second IC die and a first edge of the isolation layer is at least 100 micrometers; and
a lead frame flag, wherein the first die is attached to the lead frame flag;
wire bonds between the first IC die and a first set of lead fingers; and
wire bonds between the second IC die and a second set of lead fingers, wherein an end of the wire bonds between the second IC die and the second set of lead fingers are connected to a second major surface of the second die which is opposite the first major surface of the second IC die.
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Abstract
A packaged integrated circuit (IC) device includes a first IC die with a first inductor, a first layer of adhesive on a first major surface of the first IC die, an isolation layer over the first layer of adhesive, a second layer of adhesive on the isolation layer, a second IC die on the second layer of adhesive, and a second inductor in the second IC die aligned to communicate with the first inductor. The isolation layer extends a prespecified distance beyond a first edge of the second IC die.
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Citations
17 Claims
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1. A packaged integrated circuit (IC) device comprising:
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a first IC die; a first inductor in the first IC die; a first layer of adhesive on a first major surface of the first IC die; an isolation layer over the first layer of adhesive; a second layer of adhesive on the isolation layer; a second IC die on the second layer of adhesive, wherein a first major surface of the second IC die is in direct contact with the second layer of adhesive; a second inductor in the second IC die aligned to communicate with the first inductor, wherein the isolation layer extends beyond a first edge of the second IC die wherein a creepage distance between the first edge of the second IC die and a first edge of the isolation layer is at least 100 micrometers; and a lead frame flag, wherein the first die is attached to the lead frame flag; wire bonds between the first IC die and a first set of lead fingers; and wire bonds between the second IC die and a second set of lead fingers, wherein an end of the wire bonds between the second IC die and the second set of lead fingers are connected to a second major surface of the second die which is opposite the first major surface of the second IC die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A packaged integrated circuit (IC) device comprising:
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a first IC die; a first inductor in the first IC die; a first layer of adhesive on a first major surface of the first IC die; an isolation layer over the first layer of adhesive; a second layer of adhesive on the isolation layer; a second IC die on the second layer of adhesive; a second inductor in the second IC die aligned to communicate with the first inductor, wherein the isolation layer extends beyond a first edge of the second IC die; and a conductive ring beneath the second layer of adhesive having an inner perimeter and an output perimeter, wherein the inner perimeter is beneath the second IC die, between the first and second IC die, and the outer perimeter extends around all four edges of the second IC die, wherein each of the four edges is perpendicular to the second adhesive layer and the conductive ring, such that all corners of the second IC die are over the conductive ring within the outer perimeter wherein a minimum distance between the first edge of the second IC die and the outer perimeter of the conductive ring extending past the first edge of the second IC die is at least 10 micrometers. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification