Thrysitor and thermal switch device and assembly techniques therefor
First Claim
1. A hybrid device, comprising:
- a lead frame, the lead frame comprising;
a central portion; and
a side pad, the side pad being laterally disposed with respect to the central portion;
a thyristor device, the thyristor device comprising a semiconductor die and further comprising a gate, wherein the thyristor device is disposed on the central portion;
a positive temperature coefficient (PTC) device electrically coupled to the gate of the thyristor device, wherein the PTC device is disposed on the side pad, and is not disposed on the thyristor device; and
a thermal coupler having a first end connected to the thyristor device and a second end attached to the PTC device, the thermal coupler electrically connecting the gate to the PTC device,wherein the thermal coupler comprises a copper arm,wherein the thyristor device comprises an upper surface, the upper surface including a gate electrode and a first main terminal electrode, andwherein the first main terminal electrode surrounds the gate electrode and is electrically isolated from the gate electrode.
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Accused Products
Abstract
A device may include a lead frame, where the lead frame includes a central portion, and a side pad, the side pad being laterally disposed with respect to the central portion. The device may further include a thyristor device, the thyristor device comprising a semiconductor die and further comprising a gate, wherein the thyristor device is disposed on a first side of the lead frame on the central portion. The device may also include a positive temperature coefficient (PTC) device electrically coupled to the gate of the thyristor device, wherein the PTC device is disposed on the side pad on the first side of the lead frame; and a thermal coupler having a first end connected to the thyristor device and a second end attached to the PTC device.
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Citations
13 Claims
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1. A hybrid device, comprising:
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a lead frame, the lead frame comprising; a central portion; and a side pad, the side pad being laterally disposed with respect to the central portion; a thyristor device, the thyristor device comprising a semiconductor die and further comprising a gate, wherein the thyristor device is disposed on the central portion; a positive temperature coefficient (PTC) device electrically coupled to the gate of the thyristor device, wherein the PTC device is disposed on the side pad, and is not disposed on the thyristor device; and a thermal coupler having a first end connected to the thyristor device and a second end attached to the PTC device, the thermal coupler electrically connecting the gate to the PTC device, wherein the thermal coupler comprises a copper arm, wherein the thyristor device comprises an upper surface, the upper surface including a gate electrode and a first main terminal electrode, and wherein the first main terminal electrode surrounds the gate electrode and is electrically isolated from the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A hybrid device, comprising:
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a lead frame, the lead frame comprising; a central portion; and a side pad, the side pad being laterally disposed with respect to the central portion; a thyristor device, the thyristor device comprising a semiconductor die and further comprising a gate, wherein the thyristor device is disposed on the central portion; a positive temperature coefficient (PTC) device electrically coupled to the gate of the thyristor device, wherein the PTC device is disposed on the side pad, and is not disposed on the thyristor device; and a thermal coupler having a first end connected to the thyristor device and a second end attached to the PTC device, the thermal coupler electrically connecting the gate to the PTC device, wherein the PTC device comprises a trip temperature, wherein the thyristor device comprises a maximum junction temperature, and wherein the maximum junction temperature exceeds the trip temperature by 20 degrees C. or less. - View Dependent Claims (10, 11)
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9. A hybrid device, comprising:
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a lead frame, the lead frame comprising; a central portion; and a side pad, the side pad being laterally disposed with respect to the central portion; a thyristor device, the thyristor device comprising a semiconductor die and further comprising a gate, wherein the thyristor device is disposed on the central portion; a positive temperature coefficient (PTC) device electrically coupled to the gate of the thyristor device, wherein the PTC device is disposed on the side pad, and is not disposed on the thyristor device; and a thermal coupler having a first end connected to the thyristor device and a second end attached to the PTC device, the thermal coupler electrically connecting the gate to the PTC device, wherein the thyristor device is affixed to a first side of the central portion of the lead frame, and wherein the PTC device is affixed to the side pad on the first side of the lead frame. - View Dependent Claims (12, 13)
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Specification