Methods of forming an ultra-low-k dielectric layer and dielectric layers formed thereby
First Claim
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1. A method of forming an ultra-low-k dielectric layer, the method comprising:
- forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen;
performing a first ultraviolet process on the first layer to convert the first layer into a second layer; and
performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process,wherein oxygen and a porogen are not supplied while forming the first layer.
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Abstract
Embodiments of the present inventive concepts provide methods of forming an ultra-low-k dielectric layer and the ultra-low-k dielectric layer formed thereby. The method may include forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen, performing a first ultraviolet process on the first layer to convert the first layer into a second layer, and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process.
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19 Claims
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1. A method of forming an ultra-low-k dielectric layer, the method comprising:
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forming a first layer by supplying a precursor including silicon, oxygen, carbon, and hydrogen; performing a first ultraviolet process on the first layer to convert the first layer into a second layer; and performing a second ultraviolet process on the second layer under a process condition different from that of the first ultraviolet process, wherein oxygen and a porogen are not supplied while forming the first layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An ultra-low-k dielectric layer comprising silicon, oxygen, carbon, and hydrogen and having a porous structure including a plurality of pores,
wherein a content of the carbon in the ultra-low-k dielectric layer ranges from about 30 at. % to about 35 at. %, and wherein, in the ultra-low-k dielectric layer, a ratio of a content of all Si— - CH3 bonds to a content of all Si—
O bonds ranges from about 0.037 to about 0.053. - View Dependent Claims (17, 18, 19)
- CH3 bonds to a content of all Si—
Specification