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Semiconductor device having a gate and method of forming the same

  • US 10,446,557 B2
  • Filed: 07/07/2016
  • Issued: 10/15/2019
  • Est. Priority Date: 09/18/2015
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, comprising:

  • etching a semiconductor substrate to form a gate trench therein;

    forming a gate dielectric on the gate trench of the semiconductor substrate;

    forming a first conductive material layer on the gate dielectric;

    forming a source material layer on the first conductive material layer, the source material layer comprising a first element;

    diffusing the first element into the first conductive material layer by performing a thermal treatment process to form a doped material layer;

    removing the source material layer formed on the doped material layer in its entirety from the gate trench; and

    forming a second conductive material layer that physically contacts the doped material layer;

    wherein the first element included in the source material layer is diffused into the first conductive material layer and is not diffused into the gate dielectric during the thermal treatment process.

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