Method of fabricating DRAM
First Claim
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1. A method of fabricating a DRAM, comprising:
- providing a substrate; and
forming a first mask layer, wherein the steps of forming the first mask layer comprise;
forming a hydrogen-containing silicon nitride layer to cover the substrate, and forming a silicon oxide layer to cover and contact the hydrogen-containing silicon nitride layer, wherein the hydrogen-containing silicon nitride layer has the chemical formula;
SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1;
patterning the first mask layer to form a first patterned mask layer;
etching the substrate by taking the first patterned mask layer as a first mask to form a word line trench;
removing the first patterned mask layer entirely; and
forming a word line in the word line trench.
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Abstract
A method of fabricating a DRAM includes providing a substrate. Later, a first mask layer is formed to cover the substrate. The first mask layer includes a hydrogen-containing silicon nitride layer and a silicon oxide layer. The hydrogen-containing silicon nitride layer has the chemical formula: SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1. After that, the first mask layer is patterned to form a first patterned mask layer. Next, the substrate is etched by taking the first patterned mask layer as a mask to form a word line trench. Subsequently, the first patterned mask layer is removed entirely. Finally, a word line is formed in the word line trench.
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Citations
6 Claims
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1. A method of fabricating a DRAM, comprising:
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providing a substrate; and forming a first mask layer, wherein the steps of forming the first mask layer comprise; forming a hydrogen-containing silicon nitride layer to cover the substrate, and forming a silicon oxide layer to cover and contact the hydrogen-containing silicon nitride layer, wherein the hydrogen-containing silicon nitride layer has the chemical formula;
SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1;patterning the first mask layer to form a first patterned mask layer; etching the substrate by taking the first patterned mask layer as a first mask to form a word line trench; removing the first patterned mask layer entirely; and forming a word line in the word line trench. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification