Semiconductor device comprising slanted slope electrode contact windows
First Claim
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1. A semiconductor device comprising:
- a semiconductor layer formed on a substrate, the semiconductor layer including an electron transit layer on the substrate, an electron supply layer on the electron transit layer, and a cap layer on the electron supply layer;
an electrode contact window that includes a recess formed in the electron supply layer and the cap layer, the recess providing an inner wall that has a slanted slope, the inner wall exposing the electron supply layer and the cap layer; and
a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer,wherein the recess includes an edge at a surface of the cap layer and a bottom in the electron supply layer but apart from the electron transit layer, the slanted slope extending from the bottom to the edge of the recess, andwherein the drain electrode is formed in the recess.
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Abstract
A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.
7 Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor layer formed on a substrate, the semiconductor layer including an electron transit layer on the substrate, an electron supply layer on the electron transit layer, and a cap layer on the electron supply layer; an electrode contact window that includes a recess formed in the electron supply layer and the cap layer, the recess providing an inner wall that has a slanted slope, the inner wall exposing the electron supply layer and the cap layer; and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, wherein the recess includes an edge at a surface of the cap layer and a bottom in the electron supply layer but apart from the electron transit layer, the slanted slope extending from the bottom to the edge of the recess, and wherein the drain electrode is formed in the recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a semiconductor layer formed on a substrate, the semiconductor layer including an electron transit layer on the substrate, an electron supply layer on the electron transit layer, and a cap layer on the electron supply layer, the semiconductor layer having a top surface; an electrode contact window that includes a recess formed in the electron supply layer and the cap layer, the recess providing an inner wall having a slanted slope and a bottom that is located in the electron supply layer but apart from the electron transit layer, the slanted slope extending from the bottom to the top surface of the semiconductor layer; and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, wherein the drain electrode is provided in the recess. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification