Semiconductor device
First Claim
1. A semiconductor device, comprising:
- a substrate comprising a first fin segment and a second fin segment respectively protruding from a top surface of the substrate, wherein the first fin segment and the second fin segment respectively extend along a first direction and are arranged along a second direction, the first fin segment comprises a first fin structure at an end of the first fin segment, and the second fin segment comprises a first recess at an end of the second fin segment, and the first recess and the first fin structure are arranged along the second direction;
a patterned metal gate layer disposed on the substrate, wherein the patterned metal gate layer covers the first fin structure; and
a first epitaxial layer disposed in the first recess.
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate and a patterned metal gate layer. The substrate includes a first fin segment and a second fin segment respectively protruding from a top surface of the substrate. The first fin segment and the second fin segment respectively extend along a first direction and are arranged along a second direction, the first fin segment comprises a first fin structure at an end of the first fin segment, and the second fin segment comprises a first recess at an end of the second fin segment, and the first recess and the first fin structure are arranged along the second direction. The patterned metal gate layer is disposed on the substrate, and the patterned metal gate layer covers the first fin structure.
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Citations
11 Claims
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1. A semiconductor device, comprising:
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a substrate comprising a first fin segment and a second fin segment respectively protruding from a top surface of the substrate, wherein the first fin segment and the second fin segment respectively extend along a first direction and are arranged along a second direction, the first fin segment comprises a first fin structure at an end of the first fin segment, and the second fin segment comprises a first recess at an end of the second fin segment, and the first recess and the first fin structure are arranged along the second direction; a patterned metal gate layer disposed on the substrate, wherein the patterned metal gate layer covers the first fin structure; and a first epitaxial layer disposed in the first recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification