Semiconductor device and method for fabricating the same

• US 10,446,668 B2
• Filed: 11/06/2015
• Issued: 10/15/2019
• Est. Priority Date: 08/10/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Alam, Mohammed R
• Application Number:
  US14/934,417
• Publication Number:
  US 20160064525A1
• Time in Patent Office: 1,439 Days
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 27/11807 CMOS gate arrays
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/1054 with a variation of the composition, e.g. channel with strained layer for increasing the mobility
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H10B 12/05 Making the transistor
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components

Abstract

To provide a highly reliable semiconductor device exhibiting stable electrical characteristics. To fabricate a highly reliable semiconductor device. Included are an oxide semiconductor stack in which a first to a third oxide semiconductor layers are stacked, a source and a drain electrode layers contacting the oxide semiconductor stack, a gate electrode layer overlapping with the oxide semiconductor layer with a gate insulating layer provided therebetween, and a first and a second oxide insulating layers between which the oxide semiconductor stack is sandwiched. The first to the third oxide semiconductor layers each contain indium, gallium, and zinc. The proportion of indium in the second oxide semiconductor layer is higher than that in each of the first and the third oxide semiconductor layers. The first and the third oxide semiconductor layers are each an amorphous semiconductor film. The second oxide semiconductor layer is a crystalline semiconductor film.

Claims

1. A method for fabricating a semiconductor device, comprising the steps of:

over a first oxide insulating layer, forming a first oxide semiconductor layer and a second oxide semiconductor layer;

performing on the second oxide semiconductor first heat treatment in an atmosphere of oxygen and nitrogen;

forming a third oxide semiconductor layer over the second oxide semiconductor layer;

forming a second oxide insulating layer over the third oxide semiconductor layer; and

forming a third oxide insulating layer over the second oxide insulating layer;

performing second heat treatment on the second oxide insulating layer and the third oxide insulating layer in an atmosphere of oxygen and nitrogen,

wherein the second oxide semiconductor layer has a higher crystallinity than the first oxide semiconductor layer and the third oxide semiconductor layer,

wherein the third oxide semiconductor layer is in contact with a top surface of the second oxide semiconductor layer and a side surface in an end portion of the second oxide semiconductor layer, and

wherein the first oxide semiconductor layer and the third oxide semiconductor layer are in physical contact with each other.

2. The method for fabricating a semiconductor device according to claim 1, further comprising the steps of:

forming a first electrode and a second electrode over the third oxide semiconductor layer;

forming a gate electrode over the second oxide insulating layer and the third oxide insulating layer, and

wherein the second oxide insulating layer and the third oxide insulating layer are over the first electrode, the second electrode, and the third oxide semiconductor layer.

3. The method for fabricating a semiconductor device according to claim 1, further comprising the step of:

planarizing the first oxide insulating layer before forming the first oxide semiconductor layer.

4. The method for fabricating a semiconductor device according to claim 1, wherein the first oxide insulating layer includes aluminum oxide.

5. The method for fabricating a semiconductor device according to claim 1, wherein the first oxide semiconductor layer is amorphous, wherein the second oxide semiconductor layer has a crystalline structure, and wherein the third oxide semiconductor layer is amorphous.

6. A method for fabricating a semiconductor device, comprising the steps of:

forming a first oxide semiconductor layer and a second oxide semiconductor layer;

etching the first oxide semiconductor layer and the second oxide semiconductor layer so that an island shape oxide semiconductor stack is formed;

forming a third oxide semiconductor layer covering and in contact with a top surface of the island shape oxide semiconductor stack and a side surface in an end portion of the island shape oxide semiconductor stack;

forming a first electrode and a second electrode over the third oxide semiconductor layer;

forming a first oxide insulating layer over the third oxide semiconductor layer,

forming a second oxide insulating layer over the first oxide insulating layer; and

forming a gate electrode over the first oxide insulating layer and the second oxide insulating layer,

wherein the first oxide insulating layer and the second oxide insulating layer are over the first electrode, the second electrode, and the third oxide semiconductor layer; and

wherein the first oxide semiconductor layer and the third oxide semiconductor layer are in physical contact with each other.

7. The method for fabricating a semiconductor device according to claim 6, wherein the first oxide semiconductor layer is amorphous.

8. The method for fabricating a semiconductor device according to claim 6, wherein the second oxide semiconductor layer has a crystalline structure.

9. The method for fabricating a semiconductor device according to claim 6, further comprising the step of:

performing a first heat treatment after forming the second oxide semiconductor layer.

10. The method for fabricating a semiconductor device according to claim 9, wherein the first heat treatment is performed in an inert gas atmosphere.

11. The method for fabricating a semiconductor device according to claim 6, further comprising the step of:

performing a second heat treatment after forming the third oxide semiconductor layer.

12. The method for fabricating a semiconductor device according to claim 11, wherein the second heat treatment is performed in an inert gas atmosphere.

13. A method for fabricating a semiconductor device, comprising the steps of:

forming a first oxide semiconductor layer and a second oxide semiconductor layer;

etching the first oxide semiconductor layer and the second oxide semiconductor layer;

forming a third oxide semiconductor layer covering and in contact with a top surface of the second oxide semiconductor layer and a side surface in an end portion of the second oxide semiconductor layer;

forming a first electrode and a second electrode over the third oxide semiconductor layer;

forming a first oxide insulating layer over the third oxide semiconductor layer,

forming a second oxide insulating layer over the first oxide insulating layer; and

forming a gate electrode over the first oxide insulating layer and the second oxide insulating layer, and

wherein the first oxide insulating layer and the second oxide insulating layer are over the first electrode, the second electrode, and the third oxide semiconductor layer; and

wherein the first oxide semiconductor layer and the third oxide semiconductor layer are in physical contact with each other.

14. The method for fabricating a semiconductor device according to claim 13, wherein the first oxide semiconductor layer is amorphous.

15. The method for fabricating a semiconductor device according to claim 13, wherein the second oxide semiconductor layer has a crystalline structure.

16. The method for fabricating a semiconductor device according to claim 15, further comprising the step of:

performing a first heat treatment after forming the second oxide semiconductor layer.

17. The method for fabricating a semiconductor device according to claim 16, wherein the first heat treatment is performed in an inert gas atmosphere.

18. The method for fabricating a semiconductor device according to claim 13, further comprising the step of:

performing a second heat treatment after forming the third oxide semiconductor layer.

19. The method for fabricating a semiconductor device according to claim 18, wherein the second heat treatment is performed in an inert gas atmosphere.