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Reducing MOSFET body current

  • US 10,446,680 B2
  • Filed: 09/25/2018
  • Issued: 10/15/2019
  • Est. Priority Date: 08/23/2017
  • Status: Active Grant
First Claim
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1. A bidirectional MOSFET switch having reduced body current, the switch comprising:

  • a body region that is a semiconductor of a first type separating a source region and a drain region that are a semiconductor of a second type, the body region being connected to a body terminal, the source region being connected to a source terminal, the drain region being connected to a drain terminal, and the body terminal being shorted to the source terminal;

    a buried layer that is a semiconductor of the second type separating the body region from a substrate that is a semiconductor of the first type, the buried layer being coupled to a buried layer terminal;

    a gate terminal drivable to form a channel in the body region, thereby enabling conduction between the source terminal and the drain terminal; and

    a configuration switch configured to connect the body terminal to the buried layer terminal when the source terminal voltage exceeds the drain terminal voltage.

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