Semiconductor structure and methods for crystallizing metal oxide semiconductor layer
First Claim
1. A method for crystallizing a metal oxide semiconductor layer, comprising:
- forming an amorphous metal oxide semiconductor layer on a substrate, the amorphous metal oxide semiconductor layer comprising indium gallium zinc oxide, where a mole ratio of indium;
gallium;
zinc;
oxygen is 1;
1;
1;
4;
treating the amorphous metal oxide semiconductor layer with oxygen at a pressure of about 550 mtorr to about 5000 mtorr at a temperature of about 200°
C. to about 750°
C., and changing a part of the amorphous metal oxide semiconductor layer into an indium oxide crystallization layer; and
providing a radio-frequency power source, wherein when the amorphous metal oxide semiconductor layer is being treated with oxygen, the radio-frequency power source is provided with an output power;
wherein the indium oxide crystallization layer has a desirable acid-resistance characteristic, such that the indium oxide crystallization layer can resist an aluminum acid etchant obtained by mixing nitric acid, phosphoric acid, and acetic acid.
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Abstract
The present invention provides two methods for crystallizing a metal oxide semiconductor layer and a semiconductor structure. The first crystallization method is treating an amorphous metal oxide semiconductor layer including indium with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C. The second crystallization method is, firstly, sequentially forming a first amorphous metal oxide semiconductor layer, an aluminum layer, and a second amorphous metal oxide semiconductor layer on a substrate, and, secondly, treating the first amorphous metal oxide semiconductor layer, the aluminum layer, and the second amorphous metal oxide semiconductor layer with an inert gas at a temperature of about 350° C. to about 650° C.
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Citations
4 Claims
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1. A method for crystallizing a metal oxide semiconductor layer, comprising:
-
forming an amorphous metal oxide semiconductor layer on a substrate, the amorphous metal oxide semiconductor layer comprising indium gallium zinc oxide, where a mole ratio of indium;
gallium;
zinc;
oxygen is 1;
1;
1;
4;treating the amorphous metal oxide semiconductor layer with oxygen at a pressure of about 550 mtorr to about 5000 mtorr at a temperature of about 200°
C. to about 750°
C., and changing a part of the amorphous metal oxide semiconductor layer into an indium oxide crystallization layer; andproviding a radio-frequency power source, wherein when the amorphous metal oxide semiconductor layer is being treated with oxygen, the radio-frequency power source is provided with an output power; wherein the indium oxide crystallization layer has a desirable acid-resistance characteristic, such that the indium oxide crystallization layer can resist an aluminum acid etchant obtained by mixing nitric acid, phosphoric acid, and acetic acid. - View Dependent Claims (2, 3, 4)
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Specification