Semiconductor device and method for manufacturing the same
First Claim
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1. A display device comprising:
- a pixel portion comprising a transistor; and
a terminal portion provided in a region outside the pixel portion, the terminal portion comprising an edge of a source wiring,wherein the source wiring is electrically connected to the transistor,wherein the source wiring comprises a first conductive layer and a second conductive layer over the first conductive layer,wherein the second conductive layer comprises copper,wherein the transistor comprises a channel formation region in an oxide semiconductor layer,wherein the oxide semiconductor layer comprises indium, gallium, and zinc,wherein the oxide semiconductor layer is provided over a gate wiring,wherein the gate wiring comprises copper, andwherein the display device is configured to be driven in a fringe field switching mode.
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Abstract
By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
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Citations
16 Claims
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1. A display device comprising:
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a pixel portion comprising a transistor; and a terminal portion provided in a region outside the pixel portion, the terminal portion comprising an edge of a source wiring, wherein the source wiring is electrically connected to the transistor, wherein the source wiring comprises a first conductive layer and a second conductive layer over the first conductive layer, wherein the second conductive layer comprises copper, wherein the transistor comprises a channel formation region in an oxide semiconductor layer, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, wherein the oxide semiconductor layer is provided over a gate wiring, wherein the gate wiring comprises copper, and wherein the display device is configured to be driven in a fringe field switching mode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a pixel portion comprising a transistor; a first terminal portion provided in a first region outside the pixel portion, the first terminal portion comprising an edge of a source wiring; and a second terminal portion provided in a second region outside the pixel portion, the second terminal portion comprising an edge of a gate wiring, wherein the source wiring is electrically connected to the transistor, wherein the source wiring comprises a first conductive layer and a second conductive layer over the first conductive layer, wherein the second conductive layer comprises copper, wherein the transistor comprises a channel formation region in an oxide semiconductor layer, wherein the oxide semiconductor layer comprises indium, gallium, and zinc, wherein the oxide semiconductor layer is provided over the gate wiring, wherein the gate wiring comprises copper, and wherein the display device is configured to be driven in a fringe field switching mode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification