Magnetoresistance effect element
First Claim
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1. A magnetoresistance effect element comprising:
- a first ferromagnetic metal layer;
a second ferromagnetic metal layer; and
a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers,wherein the tunnel barrier layer has a spinel structure comprising a divalent cation and a trivalent cation in a unit cell wherein a concentration of constituent elements of the divalent cation in the unit cell is more than half a concentration of constituent elements of the trivalent cation in the unit cell, andwherein the divalent cation is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium,wherein the tunnel barrier layer comprises;
at least one lattice-matched portion that is lattice-matched with both of the first ferromagnetic metal layer and the second ferromagnetic metal layer; and
at least one lattice-mismatched portion that is not lattice-matched with at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer,and wherein, when viewed in a stacking direction of a cross-section TEM image of the interface between the tunnel barrier layer and the first and/or the second ferromagnetic metal layer, a lattice-matched portion is made up of a plurality of sequential, continuously-connected lattice lines, and a lattice-mismatched portion is made up of a plurality of sequential, non-continuously-connected lattice lines and/or no lattice lines.
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Abstract
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0<x≤4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.
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Citations
7 Claims
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1. A magnetoresistance effect element comprising:
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a first ferromagnetic metal layer; a second ferromagnetic metal layer; and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, wherein the tunnel barrier layer has a spinel structure comprising a divalent cation and a trivalent cation in a unit cell wherein a concentration of constituent elements of the divalent cation in the unit cell is more than half a concentration of constituent elements of the trivalent cation in the unit cell, and wherein the divalent cation is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium, wherein the tunnel barrier layer comprises;
at least one lattice-matched portion that is lattice-matched with both of the first ferromagnetic metal layer and the second ferromagnetic metal layer; and
at least one lattice-mismatched portion that is not lattice-matched with at least one of the first ferromagnetic metal layer and the second ferromagnetic metal layer,and wherein, when viewed in a stacking direction of a cross-section TEM image of the interface between the tunnel barrier layer and the first and/or the second ferromagnetic metal layer, a lattice-matched portion is made up of a plurality of sequential, continuously-connected lattice lines, and a lattice-mismatched portion is made up of a plurality of sequential, non-continuously-connected lattice lines and/or no lattice lines. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification