Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same

• US 10,446,744 B2
• Filed: 03/08/2018
• Issued: 10/15/2019
• Est. Priority Date: 03/08/2018
• Status: Active Grant

• Current Assignee: Integrated Silicon Solution Incorporated (Uphill Investment Co.)
• Original Assignee: Spin Memory, Inc.
• Inventors: Vasquez, Jorge, Yam, Danny
• Primary Examiner(s): Kusumakar, Karen
• Application Number:
  US15/916,078
• Publication Number:
  US 20190280194A1
• Time in Patent Office: 586 Days
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67309 characterized by the substrate support
• CPC Class Codes: H01L 21/67313 Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
• CPC Class Codes: H01L 21/68771 characterised by supporting more than one semiconductor substrate
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

Semiconductor substrate adaptor configured to adapt a substrate of a first dimension to a second dimension, such that the substrate can be properly supported by a supporting mechanism (e.g., a wafer cassette) customized for substrates of the second dimension. The substrate adaptor may be made of quartz. The combination of the substrate adaptor and a substrate fitting therein causes no perturbation in various aspects of a semiconductor process. Therefore, the substrate adaptor conveniently enables a substrate of the first dimension to be processed in the same processing equipment and conditions as a substrate of the second dimension. A vertical substrate adaptor may have a semicircular body with a semicircular cutout for accommodating a wafer and can support a wafer vertically. A horizontal substrate adaptor may have a circular body with a circular cutout for accommodating an entire wafer and supporting the wafer horizontally.

Claims

1. A planar wafer adaptor comprises:

a planar body;

a first cutout from the planar body;

a first boundary having a perimeter contour substantially equivalent to a semiconductor wafer of a first dimension;

a second boundary along said first cutout and having a perimeter contour substantially equivalent to a semiconductor wafer of a second dimension; and

a lateral step disposed along said second boundary and configured to support an edge of said semiconductor wafer of said second dimension and configured to align said semiconductor wafer of said second dimension in a horizontal orientation when said planar body is aligned horizontally, wherein said planar body has a thermal mass that is substantially equal to a thermal mass of a semiconductor wafer of said first dimension minus an expected thermal mass of said semiconductor wafer of said second dimension.

2. The planar wafer adaptor of claim 1, wherein said planar body comprises quartz.

3. The planar wafer adaptor of claim 1, wherein said first boundary comprises a notch.

4. The planar wafer adaptor of claim 1, wherein said first boundary is configured to fit in a cassette configured to accommodate semiconductor wafers of said first dimension.

5. The planar wafer adaptor of claim 1, wherein said first boundary substantially defines a circle.

6. The planar wafer adaptor of claim 1, wherein said first cutout is substantially a circle.

7. The planar wafer adaptor of claim 1, wherein said second boundary comprises a flat cut.

8. The planar wafer adaptor of claim 1, wherein a semiconductor wafer of said first dimension is 300 mm in diameter.

9. The planar wafer adaptor of claim 1, wherein said semiconductor wafer of said second dimension is one of 50 mm, 100 mm, 150 mm and 200 mm in diameter.

10. The planar wafer adaptor of claim 1, wherein said step is 3 mm in width.

11. The planar wafer adaptor of claim 1 further comprises:

a second cutout from the planar body;

a third boundary along said second cutout and having a perimeter contour substantially equivalent to a semiconductor wafer of said second dimension; and

a step disposed along said third boundary and configured to receive an edge of a semiconductor wafer of said second dimension.

12. The planar wafer adaptor of claim 1 further comprises:

a second cutout from the planar body;

a third boundary along said second cutout and having a perimeter contour substantially equivalent to a semiconductor water of a third dimension; and

a step disposed along said third boundary and configured to receive an edge of said semiconductor wafer of said third dimension.

13. A planar wafer holder comprising:

a planar body having a perimeter contour substantially equivalent to a semiconductor wafer of a first dimension;

a first cutout from the planar body and having a perimeter contour substantially equivalent to a semiconductor wafer of a second dimension that is smaller than said first dimension,

a step disposed along said first cutout and configured to;

receive an edge of said semiconductor wafer of said second dimension; and

hold said semiconductor wafer of said second dimension in a cassette configured to contain semiconductor wafers of said first dimension, wherein a weight of said planar wafer holder in combination with said semiconductor wafer of said second dimension is substantially equal to a weight of a semiconductor wafer of said first dimension.

14. The planar wafer holder of claim 13, wherein said planar body comprises quartz.

15. The planar wafer holder of claim 13, wherein said planar body is substantially a circle of said first dimension and wherein said first cutout is substantially a circle of said second dimension.

16. The planar wafer holder of claim 15, wherein a semiconductor wafer of said first dimension is 300 mm in diameter, and wherein said semiconductor wafer of said second dimension is one of 50 mm, 100 mm, 150 mm and 200 mm in diameter.

17. The planar wafer holder of claim 15, wherein said planar body comprises a notch and wherein further said first cutout comprises a flat cut.

18. The planar wafer holder of claim 15 further comprising:

a second cutout from the planar body;

a third boundary along said second cutout and having a perimeter contour substantia equivalent to a semiconductor wafer of said second dimension; and

a step disposed along said third boundary and configured to receive an edge of a semiconductor wafer of said second dimension.

19. The planar wafer holder of claim 15 further comprises:

a second cutout from the planar body;

a third boundary along said second cutout and having a perimeter contour substantially equivalent to a semiconductor wafer of a third dimension; and

a step disposed along said third boundary and configured to receive an edge of said semiconductor wafer of said third dimension.

20. A method of processing semiconductor wafers in a processing apparatus, said method comprising:

calibrating a heating system of said processing apparatus based on a thermal load of a semiconductor wafer of a first dimension;

providing a semiconductor wafer of a second dimension that is smaller than said first dimension;

providing a substrate adaptor configured to horizontally support said semiconductor wafer of said second dimension, wherein said substrate adaptor comprises;

a planar body having a perimeter contour substantially equivalent to a semiconductor wafer of said first dimension;

a first cutout from the planar body and having a perimeter contour substantially equivalent to said semiconductor wafer of said second dimension that is smaller than said first dimension; and

a step disposed along said first cutout and configured to hold said semiconductor wafer of said second dimension in a cassette configured to contain semiconductor wafers of said first dimension,

placing said semiconductor wafer of said second dimension onto said step to fit in said first cutout;

loading said semiconductor wafer of said second dimension with said substrate adaptor into a cassette configured to contain a semiconductor wafer of said first dimension;

loading said cassette containing said semiconductor wafer of said second dimension with said substrate adaptor to said processing apparatus; and

processing said semiconductor wafer of said second dimension in said processing apparatus in a horizontal orientation.

21. The method of claim 20, wherein said processing comprises annealing said semiconductor wafer of said second dimension with an external magnetic field that is perpendicular to said semiconductor wafer of said second dimension.

22. The method of claim 20, wherein said planar body has a thermal mass that is substantially equal to a thermal mass of a semiconductor wafer of said first dimension minus a thermal mass of said semiconductor wafer of said second dimension.