Diffused resistive memory cell with buried active zone

• US 10,446,748 B2
• Filed: 08/23/2018
• Issued: 10/15/2019
• Est. Priority Date: 05/03/2016
• Status: Active Grant

• Current Assignee: JP Morgan Chase Bank, N.A. (JP Morgan Chase & Co)
• Original Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Inventors: Bedau, Daniel
• Primary Examiner(s): Gebremariam, Samuel A
• Application Number:
  US16/110,079
• Publication Number:
  US 20190006585A1
• Time in Patent Office: 418 Days
• CPC Class Codes: G11C 13/0002 using resistive RAM [RRAM] elements
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 2213/31 Material having complex metal oxide, e.g. perovskite structure
• CPC Class Codes: G11C 2213/32 Material having simple binary metal oxide structure
• CPC Class Codes: H10N 70/041 Modification of the switching material, e.g. post-treatment, doping
• CPC Class Codes: H10N 70/043 by implantation
• CPC Class Codes: H10N 70/20 Multistable switching devices, e.g. memristors
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8833 Binary metal oxides, e.g. TaOx
• CPC Class Codes: H10N 70/8836 Complex metal oxides, e.g. perovskites, spinels

Abstract

An apparatus for non-volatile memory, and more specifically a ReRAM device with a buried resistive memory cell. The memory cell includes a first contact disposed on a substrate, an active layer, a second contact, a first diffused zone disposed within the active layer, a second diffused zone disposed within the active layer, and an active switching zone disposed within the active layer in between the first diffused zone and the second diffused zone. In one embodiment, the active zone may be doped by diffusion or ion implantation and/or may be fabricated utilizing a self-aligned process. In another embodiment, the memory cell may combine a deep implant and shallow diffusion well to create the active zone. The vertically and laterally isolated buried resistive memory cell concentrates the electric field away from the edges of the device and eliminates the effects of interface impurities and contaminants.

Claims

1. A ReRAM device, comprising:

a first contact;

a second contact; and

an active layer disposed between the first contact and the second contact, wherein the active layer comprises;

a first diffused zone adjacent the first contact, wherein the first diffused zone has a first composition;

a second diffused zone adjacent the second contact, wherein the second diffused zone has a second composition; and

an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone.

2. The device of claim 1, wherein the active zone comprises a binary or complex metal oxide material selected from the group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, manganates, cuprates, or nickelates.

3. The device of claim 1, wherein the first diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.

4. The device of claim 1, wherein the second diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.

5. The device of claim 1, further comprising a substrate, wherein the second contact is disposed on the substrate.

6. The device of claim 1, wherein the first contact comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, indium, tin, silver, copper, germanium, or hafnium.

7. The device of claim 1, wherein the third composition of the active zone is different from the second composition of the second diffused zone.

8. The device of claim 1, wherein the active layer that has a gradient that changes from the first contact to the second contact.

9. A ReRAM device, comprising:

a first contact;

a second contact; and

an active layer, wherein the first contact and the second contact are disposed on the active layer, and wherein the active layer comprises;

a first diffused zone adjacent the first contact, wherein the first diffused zone has a first composition;

a second diffused zone adjacent the second contact, wherein the second diffused zone has a second composition;

an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone; and

a non-active zone disposed on top of the active zone.

10. The device of claim 9, wherein the active layer comprises a binary or complex metal oxide material selected from a group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, manganates, cuprates, or nickelates.

11. The device of claim 9, wherein the active zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, hafnium, tin, silver, copper, germanium, or indium.

12. The device of claim 9, wherein the non-active zone comprises a greater oxygen content compared to the active switching zone.

13. The device of claim 9, wherein the first diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, hafnium, tin, silver, copper, germanium, or indium.

14. The device of claim 9, wherein the second diffused zone comprises a metal or metal alloy selected from the group consisting of aluminum, tantalum, hafnium, tin, silver, copper, germanium, or indium.

15. The device of claim 9, wherein the active layer that has an oxygen gradient.

16. The device of claim 9, wherein the first contact is disposed laterally adjacent to the second contact.

17. The device of claim 16, wherein the non-active zone is disposed on the active zone in between the first contact and the second contact.

23. The device of claim 21, wherein the non-active zone comprises a greater oxygen content compared to the active switching zone device similar to claim 14 where the electrodes are under the active material, not on top.

18. A ReRAM device, comprising:

a first contact;

a second contact; and

an active layer, wherein the first contact and the second contact are disposed on the active layer, and wherein the active layer comprises;

a first diffused zone implanted within the active layer and adjacent the first contact, wherein the first diffused zone has a first composition;

a second diffused zone implanted within the first diffused zone and adjacent the second contact, wherein the second diffused zone has a second composition; and

an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone.

19. The device of claim 18, wherein the first diffused zone has an upper surface adjacent an upper surface of the active layer.

20. The device of claim 18, wherein the second diffused zone has an upper surface adjacent the upper surface of the first diffused zone.

21. A ReRAM device, comprising:

a first contact;

a second contact; and

an active layer, wherein the active layer is disposed on the first contact and the second contact, and wherein the active layer comprises;

a first diffused zone adjacent the first contact, wherein the first diffused zone has a first composition;

a second diffused zone adjacent the second contact, wherein the second diffused zone has a second composition;

an active zone disposed between the first diffused zone and the second diffused zone, wherein the active zone has a third composition different from the first composition of the first diffused zone; and

a non-active zone disposed on top of the active zone.

22. The device of claim 21, wherein the active layer comprises a binary or complex metal oxide material selected from a group consisting of tantalum oxide, hafnium oxide, titanium oxide, zirconium dioxide, aluminum oxide, titanium dioxide, zinc oxide, or manganates, cuprates, or nickelates.