SiC single crystal and method for producing same
First Claim
1. A method for producing a SiC single crystal in which a SiC seed crystal substrate having a {0001} face,the SiC seed crystal substrate being held on a center portion of a seed crystal holding shaft, the seed crystal holding shaft including the center portion and a side portion that surrounds the center portion, the side portion having alternating recesses and raised sections, is contacted with a Si—
- C solution in a crucible,the Si—
C solution having a temperature gradient such that a temperature of the Si—
C solution decreases from an interior of the Si—
C solution toward a surface of the Si—
C solution, to grow the SiC single crystal from the {0001} face of the SiC seed crystal substrate in a <
11-20>
direction and <
1-100>
direction and form a grown SiC single crystal, wherein the method comprises;
growing the SiC single crystal from the {0001} face of the SiC seed crystal substrate to a length of 2 mm or greater in the growth direction to form the grown SiC single crystal, andprior to growing the SiC single crystal, configuring the seed crystal substrate and the seed crystal holding shaft to reduce heat loss from the <
11-20>
direction to be lower than heat loss from the <
1-100>
direction by bonding a top face of the seed crystal substrate to the center portion of the seed crystal holding shaft so thatthe <
1-100>
direction of the seed crystal substrate is oriented to coincide with the recesses of the seed crystal holding shaft, andthe <
11-20>
direction of the seed crystal substrate is oriented to coincide with the raised sections of the seed crystal holding shaft;
whereina ratio S/C of a diameter S of the SiC seed crystal substrate to an inner diameter C of the crucible satisfies a relationship 0.50≤
S/C<
1.0.
2 Assignments
0 Petitions
Accused Products
Abstract
Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≤0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.
6 Citations
9 Claims
-
1. A method for producing a SiC single crystal in which a SiC seed crystal substrate having a {0001} face,
the SiC seed crystal substrate being held on a center portion of a seed crystal holding shaft, the seed crystal holding shaft including the center portion and a side portion that surrounds the center portion, the side portion having alternating recesses and raised sections, is contacted with a Si— - C solution in a crucible,
the Si—
C solution having a temperature gradient such that a temperature of the Si—
C solution decreases from an interior of the Si—
C solution toward a surface of the Si—
C solution, to grow the SiC single crystal from the {0001} face of the SiC seed crystal substrate in a <
11-20>
direction and <
1-100>
direction and form a grown SiC single crystal, wherein the method comprises;growing the SiC single crystal from the {0001} face of the SiC seed crystal substrate to a length of 2 mm or greater in the growth direction to form the grown SiC single crystal, and prior to growing the SiC single crystal, configuring the seed crystal substrate and the seed crystal holding shaft to reduce heat loss from the <
11-20>
direction to be lower than heat loss from the <
1-100>
direction by bonding a top face of the seed crystal substrate to the center portion of the seed crystal holding shaft so thatthe <
1-100>
direction of the seed crystal substrate is oriented to coincide with the recesses of the seed crystal holding shaft, andthe <
11-20>
direction of the seed crystal substrate is oriented to coincide with the raised sections of the seed crystal holding shaft;
whereina ratio S/C of a diameter S of the SiC seed crystal substrate to an inner diameter C of the crucible satisfies a relationship 0.50≤
S/C<
1.0. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- C solution in a crucible,
Specification