Thermal event sensor

• US 10,451,489 B2
• Filed: 07/08/2016
• Issued: 10/22/2019
• Est. Priority Date: 07/10/2015
• Status: Active Grant

• Current Assignee: Charles Stark Draper Laboratory Incorporated
• Original Assignee: Charles Stark Draper Laboratory Incorporated
• Inventors: Bousquet, Rob A., Chaparala, Murali, Hollosi, Brent M., Smigelski, Zachary R., Uy, Wes, Freifeld, Geremy
• Primary Examiner(s): Guadalupe-McCall, Yaritza
• Application Number:
  US15/205,401
• Publication Number:
  US 20170227405A1
• Time in Patent Office: 1,201 Days
• Field of Search: 374178
• CPC Class Codes: G01K 11/00 Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
• CPC Class Codes: G01K 13/00 Thermometers specially adapted for specific purposes
• CPC Class Codes: G01K 3/04 in respect of time
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/7886 Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Abstract

A thermal event sensor includes a charge storage component formed on a substrate, configured to hold an initial charge, and configured to lose charge at a rate dependent upon temperature. A sensing interface is coupled to the charge storage component and a readout mechanism is coupled to the sensing interface. The readout mechanism senses a remaining charge on the charge storage component and provides a readout value indicative of the remaining charge.

Claims

1. A thermal event sensor comprising:

a charge storage component formed on a substrate including a floating gate and a plurality of metal layers, the plurality of metal layers being electrically coupled to one another and the floating gate, separated by corresponding layers of field oxide, and configured to hold an initial charge and to lose charge at a rate dependent upon a temperature of the charge storage component;

a sensing interface including at least one field effect transistor channel in proximity to the floating gate, the at least one field effect transistor channel being coupled to the floating gate through a gate oxide; and

a readout mechanism coupled to the sensing interface and configured to sense a remaining charge on the charge storage component without substantially altering the remaining charge, and configured to provide a readout value indicative of the remaining charge.

2. The sensor of claim 1 wherein the floating gate is formed of a single layer of polysilicon material.

3. The sensor of claim 1 wherein the sensing interface includes at least two field effect transistor channels coupled to the floating gate, the at least two field effect transistor channels formed in a lateral configuration to each other.

4. The sensor of claim 1 wherein the sensing interface further includes a control gate in proximity to the floating gate.

5. The sensor of claim 1 wherein the readout mechanism is a readout circuit coupled to the field effect transistor channel and the readout circuit is configured to detect a sense current through the field effect transistor channel.

6. The sensor of claim 1 further comprising a charging mechanism coupled to the sensing interface and configured to place an initial charge on the charge storage component.

7. The sensor of claim 6 wherein the charging mechanism is configured to place the initial charge on the charge storage component via at least one of Fowler-Nordheim tunneling and hot carrier injection.

8. The sensor of claim 6 wherein the charging mechanism is configured to be disabled after placing the initial charge on the charge storage component.

9. The sensor of claim 1 wherein the charge storage component includes a doped dielectric configured to hold the initial charge by trapping the initial charge.

10. A method of detecting thermal events, the method comprising:

providing, via a charging mechanism, a first charge on a charge storage component at a first time, the charge storage component including a plurality of metal layers electrically coupled to one another and separated by corresponding layers of field oxide, the first charge being provided by depositing charge on the plurality of metal layers, and the charge storage component configured to lose charge at a rate corresponding to temperature;

sensing a remaining charge on the charge storage component at a second time; and

comparing the sensed remaining charge to the first charge.

11. The method of claim 10 wherein sensing the remaining charge includes sensing a conductivity of a transistor channel in proximity to the charge storage component, the remaining charge influencing a field effect on the transistor channel.

12. The method of claim 10 further comprising determining whether the charge storage component has been exposed to a thermal event based upon the comparison.

13. The method of claim 10 further comprising disabling the charging mechanism after providing the first charge.

14. A method of detecting temperature variations, the method comprising:

providing, via a charging mechanism, a first charge on a charge storage component at a first time, the charge storage component including a plurality of metal layers electrically coupled to one another and separated by corresponding layers of field oxide, the first charge being provided by depositing charge on the plurality of metal layers, and the charge storage component configured to lose charge at a rate corresponding to temperature;

determining an expected charge remaining on the charge storage component at a second time;

sensing a second charge remaining on the charge storage component at the second time;

comparing the second charge to the expected charge; and

determining based on the comparison whether the charge storage component has been exposed to a temperature variation outside of an allowed range.

15. The method of claim 14 wherein sensing the remaining charge includes sensing a conductivity of a transistor channel in proximity to the charge storage component, the remaining charge influencing a field effect on the transistor channel.

16. The method of claim 14 further comprising disabling the charging mechanism after providing the first charge.

17. A thermal event sensor comprising:

a charge storage component formed on a substrate including a plurality of metal layers electrically coupled to one another and a doped dielectric configured to hold an initial charge by trapping the initial charge, the charge storage component configured to lose charge at a rate dependent upon a temperature of the charge storage component;

a sensing interface coupled to the charge storage component; and

a readout mechanism coupled to the sensing interface and configured to sense a remaining charge on the charge storage component without substantially altering the remaining charge, and configured to provide a readout value indicative of the remaining charge.