Semiconductor device, liquid crystal display device, and semiconductor device manufacturing method
First Claim
1. A semiconductor device including a substrate and a thin film transistor supported by the substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode, the semiconductor device comprising:
- an oxide semiconductor layer including an active layer of the thin film transistor;
a first insulating layer provided on the oxide semiconductor layer;
a first metal layer provided on the first insulating layer, the first metal layer including the gate electrode of the thin film transistor;
a second insulating layer provided on the first metal layer;
a second metal layer provided on the second insulating layer, the second metal layer including at least the source electrode;
a third insulating layer provided on the second metal layer; and
a first transparent electrode layer provided on the third insulating layer, whereinthe oxide semiconductor layer includes a first portion lying below the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side,the third insulating layer does not include an organic insulating layer,the first insulating layer, the second insulating layer, and the third insulating layer include a first contact hole which overlaps the second portion of the oxide semiconductor layer when viewed in a normal direction of the substrate,the first transparent electrode layer includes a transparent electrically-conductive layer which is in contact with the second portion of the oxide semiconductor layer in the first contact hole,the second metal layer further includes the drain electrode, andthe first contact hole also overlaps an end portion of the drain electrode on the second portion side when viewed in the normal direction of the substrate.
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Accused Products
Abstract
A semiconductor device includes: a first metal layer including a gate electrode; a first insulating layer provided on the first metal layer; an oxide semiconductor layer provided on the first insulating layer; a second insulating layer provided on the oxide semiconductor layer; a second metal layer provided on the oxide semiconductor layer and the second insulating layer, the second metal layer including a source electrode; a third insulating layer provided on the second metal layer; and a first transparent electrode layer provided on the third insulating layer. The oxide semiconductor layer includes a first portion lying above the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side. The third insulating layer does not include an organic insulating layer. The second insulating layer and the third insulating layer have a first contact hole which overlaps the second portion of the oxide semiconductor layer when viewed in a normal direction of the substrate. The first transparent electrode layer includes a transparent electrically-conductive layer which is in contact with the second portion of the oxide semiconductor layer in the first contact hole.
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Citations
11 Claims
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1. A semiconductor device including a substrate and a thin film transistor supported by the substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode, the semiconductor device comprising:
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an oxide semiconductor layer including an active layer of the thin film transistor; a first insulating layer provided on the oxide semiconductor layer; a first metal layer provided on the first insulating layer, the first metal layer including the gate electrode of the thin film transistor; a second insulating layer provided on the first metal layer; a second metal layer provided on the second insulating layer, the second metal layer including at least the source electrode; a third insulating layer provided on the second metal layer; and a first transparent electrode layer provided on the third insulating layer, wherein the oxide semiconductor layer includes a first portion lying below the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side, the third insulating layer does not include an organic insulating layer, the first insulating layer, the second insulating layer, and the third insulating layer include a first contact hole which overlaps the second portion of the oxide semiconductor layer when viewed in a normal direction of the substrate, the first transparent electrode layer includes a transparent electrically-conductive layer which is in contact with the second portion of the oxide semiconductor layer in the first contact hole, the second metal layer further includes the drain electrode, and the first contact hole also overlaps an end portion of the drain electrode on the second portion side when viewed in the normal direction of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device including a substrate and a thin film transistor supported by the substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode, the semiconductor device comprising:
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an oxide semiconductor layer including an active layer of the thin film transistor; a first insulating layer provided on the oxide semiconductor layer; a first metal layer provided on the first insulating layer, the first metal layer including the gate electrode of the thin film transistor; a second insulating layer provided on the first metal layer; a second metal layer provided on the second insulating layer, the second metal layer including at least the source electrode; a third insulating layer provided on the second metal layer; a first transparent electrode layer provided on the third insulating layer; a plurality of pixels; a fourth insulating layer provided between the third insulating layer and the first transparent electrode layer; and a second transparent electrode layer provided between the third insulating layer and the fourth insulating layer;
whereinthe oxide semiconductor layer includes a first portion lying below the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side, the third insulating layer does not include an organic insulating layer, the first insulating layer, the second insulating layer, and the third insulating layer include a first contact hole which overlaps the second portion of the oxide semiconductor layer when viewed in a normal direction of the substrate, the first transparent electrode layer includes a transparent electrically-conductive layer which is in contact with the second portion of the oxide semiconductor layer in the first contact hole, each of the plurality of pixels includes the thin film transistor and the transparent electrically-conductive layer, the transparent electrically-conductive layer functions as a pixel electrode, the first contact hole is provided also in the fourth insulating layer, and the second transparent electrode layer includes a transparent electrode which is electrically separated from the pixel electrode, the transparent electrode being capable of functioning as a common electrode.
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10. A semiconductor device including a substrate and a thin film transistor supported by the substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode, the semiconductor device comprising:
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an oxide semiconductor layer including an active layer of the thin film transistor; a first insulating layer provided on the oxide semiconductor layer; a first metal layer provided on the first insulating layer, the first metal layer including the gate electrode of the thin film transistor; a second insulating layer provided on the first metal layer; a second metal layer provided on the second insulating layer, the second metal layer including at least the source electrode; a third insulating layer provided on the second metal layer; a first transparent electrode layer provided on the third insulating layer; a fourth insulating layer provided on the first transparent electrode layer; and a second transparent electrode layer provided on the fourth insulating layer, wherein the oxide semiconductor layer includes a first portion lying below the gate electrode and a second portion extending from the first portion so as to lie across an edge of the gate electrode on the drain electrode side, the third insulating layer does not include an organic insulating layer, the first insulating layer, the second insulating layer, and the third insulating layer include a first contact hole which overlaps the second portion of the oxide semiconductor layer when viewed in a normal direction of the substrate, the first transparent electrode layer includes a transparent electrically-conductive layer which is in contact with the second portion of the oxide semiconductor layer in the first contact hole, the first contact hole is also provided in the fourth insulating layer, the first transparent electrode layer further includes a first electrode which is electrically separated from the transparent electrically-conductive layer, and the second transparent electrode layer includes a second electrode which is in contact with the transparent electrically-conductive layer in the first contact hole. - View Dependent Claims (11)
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Specification