Memory system and operating method thereof
First Claim
1. A memory system comprising:
- a memory device including;
a memory cell array including a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area having a replacement memory cell region and a reserved memory cell region;
a register suitable for generating a first signal indicating existence of the reserved memory cell region; and
a fuse unit suitable for activating the reserved memory cell region based on the first signal; and
a controller suitable for assigning an address for accessing a reserved memory cell of the reserved memory cell region based on the first signal,wherein a replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell region, and the reserved memory cell in the reserved memory cell region remains without replacing any failed memory cell in the normal memory cell region.
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Abstract
A memory system includes a memory device and a controller. The memory device includes a memory cell array including a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area having a replacement memory cell region and a reserved memory cell region; a register suitable for generating a first signal indicating existence of the reserved memory cell region; and a fuse unit suitable for activating the reserved memory cell region based on the first signal. The controller assigns an address for accessing a reserved memory cell of the reserved memory cell region based on the first signal. A replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell region, and the reserved memory cell in the reserved memory cell region remains without replacing any failed memory cell in the normal memory cell region.
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Citations
20 Claims
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1. A memory system comprising:
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a memory device including; a memory cell array including a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area having a replacement memory cell region and a reserved memory cell region; a register suitable for generating a first signal indicating existence of the reserved memory cell region; and a fuse unit suitable for activating the reserved memory cell region based on the first signal; and a controller suitable for assigning an address for accessing a reserved memory cell of the reserved memory cell region based on the first signal, wherein a replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell region, and the reserved memory cell in the reserved memory cell region remains without replacing any failed memory cell in the normal memory cell region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. An operating method of a memory system, the method comprising:
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generating a first signal indicating existence of a reserved memory cell region in a memory cell array included in a memory device; assigning an address for accessing a reserved memory cell in the reserved memory cell region based on the first signal; activating the reserved memory cell region based on the first signal; and controlling the memory device based on the address assigned to the reserved memory cell, wherein the memory cell array includes a redundancy memory cell area and a normal memory cell area, and wherein the redundancy memory cell area includes a replacement memory cell region and the reserved memory cell region, the replacement memory cell region including a replacement memory cell for replacing a failed memory cell in the normal memory cell area, the reserved memory cell region including the reserved memory cell that remains without replacing any failed normal memory cell in the normal memory cell area. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification