Copper alloy for electronic/electrical device, copper alloy plastically-worked material for electronic/electrical device, component for electronic/electrical device, terminal, and busbar

• US 10,453,582 B2
• Filed: 09/08/2016
• Issued: 10/22/2019
• Est. Priority Date: 09/09/2015
• Status: Active Grant

• Current Assignee: Mitsubishi Materials Corporation
• Original Assignee: Mitsubishi Materials Corporation
• Inventors: Matsunaga, Hirotaka, Maki, Kazunari
• Primary Examiner(s): Kopec, Mark
• Application Number:
  US15/543,664
• Publication Number:
  US 20180040389A1
• Time in Patent Office: 1,139 Days
• Field of Search: 252500
• CPC Class Codes: C22C 9/00 Alloys based on copper
• CPC Class Codes: C22F 1/00 Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working apparatus for mechanical working of metal B21, B23, B24
• CPC Class Codes: C22F 1/08 of copper or alloys based thereon
• CPC Class Codes: H01B 1/02 mainly consisting of metals or alloys
• CPC Class Codes: H01B 1/026 Alloys based on copper
• CPC Class Codes: H01B 5/02 Single bars, rods, wires, or strips
• CPC Class Codes: H02G 5/00 Installations of bus-bars

Abstract

A copper alloy for and electric and an electronic device is provided. The copper alloy includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; Pin a range of 0.0005 mass % or more and less than 0.01 mass %; and a Cu balance including inevitable impurities. In the copper alloy, a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy a relationship expressed by [Mg]+20×[P]<0.5, and an electrical conductivity of the copper alloy is more than 75% IACS.

Claims

1. A copper alloy for an electronic and electric device comprising:

Mg in a range of 0.15 mass % or more and less than 0.35 mass %;

P in a range of 0.0005 mass % or more and less than 0.0075 mass %; and

a Cu balance including inevitable impurities, wherein

a Mg content [Mg] and a P content [P], both of which are in a mass ratio, satisfy relationships expressed by [Mg]+20×

[P]<

0.5 and [Mg]/[P]≤

400, and

an electrical conductivity of the copper alloy is more than 75% International Annealed Copper Standard (IACS).

2. The copper alloy for an electronic and electric device according to claim 1, wherein

a 0.2% yield strength is 300 MPa or more when a tensile test is carried out in a direction orthogonal to a rolling direction.

3. The copper alloy for an electronic and electric device according to claim 1, wherein a residual stress ratio is 50% or more at 150°

C. for 1000 hours.

4. A plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device according to claim 1.

5. The plastically-worked copper alloy material for an electronic and electric device according to claim 4, wherein a Sn plating layer or a Ag plating layer is provided on a surface of the plastically-worked copper alloy material.

6. A component for an electronic and electric device made of the plastically-worked copper alloy material for an electronic and electric device according to claim 4.

7. A terminal made of the plastically-worked copper alloy material for an electronic and electric device according to claim 4.

8. A busbar made of the plastically-worked copper alloy material for an electronic and electric device according to claim 4.

9. The copper alloy for an electronic and electric device according to claim 1, wherein

when the copper alloy is tested for bendability, no observable folding is found in a plurality of test specimens, each of which having a width of 10 mm and a length of 30 mm is sampled from a thin plate for characteristic evaluation so that a bending axis becomes orthogonal with respect to a rolling direction, and

bendability of the copper alloy is determined by a W bending test using a W-shaped jig having a bending angle of 90 degrees and a bending radius of 0.5 mm (R/t=1) on the basis of the method of Japan Copper and Brass Association Technical Standard JCBA-T307:

2007, the testing method 4.

10. The copper alloy for an electronic and electric device according to claim 1, wherein the copper alloy is produced through the steps of:

melt casting;

homogenization/solution treatment;

rough cool working;

intermediate heat treatment;

finish cool working; and

finish heat treatment, and

the finish heat treatment is carried out at a temperature in a range of 100°

C. to 800°

C. so as to prevent a decrease in strength due to recrystallization.

11. The copper alloy for an electronic and electric device according to claim 1, wherein

the Mg content [Mg] and the P content [P] further satisfy relationships expressed by [Mg]+20×

[P]<

0.48 and 25<

[Mg]/[P]≤

400.