Organoaminosilane precursors and methods for depositing films comprising same

• US 10,453,675 B2
• Filed: 09/11/2014
• Issued: 10/22/2019
• Est. Priority Date: 09/20/2013
• Status: Active Grant

• Current Assignee: Versum Materials US Inc.
• Original Assignee: Versum Materials US Inc.
• Inventors: O'Neill, Mark Leonard, Xiao, Manchao, Lei, Xinjian, Ho, Richard, Chandra, Haripin, MacDonald, Matthew R., Wang, Meiliang
• Primary Examiner(s): Bakshi, Pancham
• Application Number:
  US14/483,751
• Publication Number:
  US 20150087139A1
• Time in Patent Office: 1,867 Days
• Field of Search: 556409, 556410, 556412, 10628711, 548406, 546 14, 544 69
• CPC Class Codes: C07F 7/10 containing nitrogen having a Si-N linkage
• CPC Class Codes: C09D 5/24 Electrically-conducting paints conductive materials H01B1/00
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/0214 the material being a silicon oxynitride, e.g. SiON or SiON:H
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02592 amorphous
• CPC Class Codes: H01L 21/02598 monocrystalline
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:

In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Claims

1. An organoaminosilane Formula A as below:

2. The organoaminosilane of claim 1 wherein the compound is the compound having Formula A, wherein R¹ and R² are the same and selected from the group consisting of methyl, ethyl, iso-propyl, n-propyl, and sec-butyl, and wherein R³ is selected from the group consisting of methylene and ethylene.

3. An organoaminosilane compound, wherein the compound is at least one selected from the group consisting of:

1 -dimethylamino- 1,3-disilapropane, di-isopropylamino-1,3-disilapropane, 1-di-secbutylamino-1,3-disilane propane, 1-di-isobutylamino-1,3-disilapropane, 1-di-tertpentylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-dimethylamino-1,4-disilabutane, 1-di-isopropylamino-1,4-disilabutane, 1,3-bis(dimethylamino)-1,3-disilapropane, 1,3-bis(di-isopropylamino)-1,3-disilapropane, 1,3-bis(di-sec-butylamino)-1,3-disilapropane, 1,3-bis(di-isobutylamino-1,3-disilapropane, 1,3-bis(di-tert-pentylamino)-1,3-disilapropane, 1,3-bis(diethylamino)-1,3-disilapropane, 1,4-bis(dimethylamino)-1,4-disilabutane, 1,4-bis(diethylamino)-1,4-disilabutane, 1,4-bis(di-isopropylamino)-1,3-disilabutane, 1,4-bis(di-sec-butylamino)-1,4-disilabutane, 1,4-bis(di-isobutylamino)-1,4-disilabutane, 1,4-bis(iso-propyl-n-propyl-amino)-1,4-disilabutane, 1,3-bis(ethylmethylamino)-1,3-disilabutane, and 1,4-bis(ethylmethylamino)-1,4-disilabutane.

4. An organoaminosilane selected from the group consisting of 1-di-isopropylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, phenylethylamino-1,4-disilabutane, 1-di-isopropylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane.

5. An organoaminosilane selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-di-isopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, phenylethylamino-1,4-disilabutane, 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane opylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane.