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Method of manufacturing semiconductor device

  • US 10,453,687 B2
  • Filed: 06/06/2018
  • Issued: 10/22/2019
  • Est. Priority Date: 07/12/2017
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • forming, on a surface of an n-type semiconductor layer, an impurity source film containing both aluminum and beryllium; and

    forming a p-type impurity-doped layer in the n-type semiconductor layer by irradiating the impurity source film with first laser light to simultaneously introduce the aluminum and the beryllium into the n-type semiconductor layer.

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