Deposition of organic films
First Claim
1. A process for forming an etch mask on a first surface of a substrate comprising the first surface and a second surface, the process comprising:
- contacting the substrate with a first vapor phase precursor; and
contacting the substrate with a second vapor phase precursor;
wherein contacting the substrate with the first and second vapor phase precursors forms an organic film selectively on the first surface relative to the second surface,wherein the etch mask comprises the organic film formed on the first surface of the substrate.
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Abstract
Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.
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Citations
20 Claims
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1. A process for forming an etch mask on a first surface of a substrate comprising the first surface and a second surface, the process comprising:
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contacting the substrate with a first vapor phase precursor; and contacting the substrate with a second vapor phase precursor; wherein contacting the substrate with the first and second vapor phase precursors forms an organic film selectively on the first surface relative to the second surface, wherein the etch mask comprises the organic film formed on the first surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A process for forming an infiltrated film as a hard mask on a first surface of a substrate comprising the first surface and a second surface, the process comprising:
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performing a selective deposition process comprising; contacting the substrate with a first vapor phase precursor; contacting the substrate with a second vapor phase precursor; wherein contacting the substrate with the first and second vapor phase precursors forms an organic thin film selectively on the first surface relative to the second surface; and subjecting the selectively formed organic film to an infiltration process to incorporate a metal into the selectively formed organic film and thereby form the infiltrated film as the hard mask. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification