Light-irradiation type thermal processing method and thermal processing apparatus

• US 10,453,715 B2
• Filed: 07/08/2016
• Issued: 10/22/2019
• Est. Priority Date: 08/17/2015
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: Aoyama, Takayuki
• Primary Examiner(s): Campbell, Thor S
• Application Number:
  US15/205,386
• Publication Number:
  US 20170053818A1
• Time in Patent Office: 1,201 Days
• Field of Search: None
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855

Abstract

From a stage of preheating by a halogen lamp to irradiation with a flash by a flash lamp, a radiation thermometer is used for measuring the temperature of a back surface of a semiconductor wafer. A increased temperature ΔT is determined by which the back surface of the semiconductor wafer is increased in temperature from the preheating temperature by irradiation with a flash. The specific heat of the semiconductor wafer has a known value. Further, the increased temperature ΔT is proportionate to the magnitude of energy applied to a front surface of the semiconductor wafer by irradiation with a flash. Thus, a front surface attained temperature of the semiconductor wafer can be determined using the increased temperature ΔT of the back surface of the semiconductor wafer during irradiation with a flash.

Claims

1. A thermal processing method for heating a substrate by irradiating said substrate with a flash, comprising the steps of:

(a) preheating said substrate by increasing said substrate in temperature to a predetermined preheating temperature before irradiating said substrate with a flash;

(b) heating said substrate increased in temperature to said preheating temperature by irradiating a front surface of said substrate with a flash;

(c) measuring an increased temperature by which a back surface of said substrate is increased in temperature from said preheating temperature by irradiation with a flash; and

(d) determining a front surface attained temperature of said substrate during irradiation with a flash based on said increased temperature,

wherein said step (d) includes the step of;

(d-1) correcting said determined front surface attained temperature using the specific heat of said substrate.

2. The thermal processing method according to claim 1, wherein in said step (d), said front surface attained temperature is determined using an integral of said increased temperature.

3. The thermal processing method according to claim 1, further comprising the step of obtaining a correlation between said increased temperature and said front surface attained temperature,

wherein in said step (d), said front surface attained temperature is determined based on said correlation.

4. The thermal processing method according to claim 1, further comprising the step of:

(e) displaying said determined front surface attained temperature.

5. A thermal processing apparatus for heating a substrate by irradiating said substrate with a flash, comprising:

a chamber that houses said substrate;

a holding member to hold said substrate inside said chamber;

a flash lamp that irradiates a front surface of said substrate held by said holding member with a flash;

a preheating part that increases said substrate in temperature to a predetermined preheating temperature before said substrate is irradiated with a flash from said flash lamp;

a back surface temperature measuring part that measures the temperature of a back surface of said substrate held by said holding member;

a front surface temperature determining part that determines a front surface attained temperature of said substrate during irradiation with a flash based on an increased temperature measured by said back surface temperature measuring part by which said back surface of said substrate is increased in temperature from said preheating temperature by irradiation with a flash; and

a temperature correcting part that corrects said front surface attained temperature determined by said front surface temperature determining part, said front surface attained temperature being corrected using the specific heat of said substrate.

6. The thermal processing apparatus according to claim 5, wherein the front surface temperature determining part determines said front surface attained temperature using an integral of said increased temperature.

7. The thermal processing apparatus according to claim 5, further comprising a storage that stores a correlation between said increased temperature and said front surface attained temperature,

wherein the front surface temperature determining part determines said front surface attained temperature based on said correlation.

8. The thermal processing apparatus according to claim 5, further comprising a display part on which said front surface attained temperature is displayed.