Systems and methods for annealing semiconductor structures
First Claim
1. A system comprising:
- a radiation source for generating first radiation;
an energy-converting structure disposed over a semiconductor structure, the energy-converting structure configured to convert first radiation into second radiation;
a second radiation reflecting structure positioned between the semiconductor structure and the energy-converting structure, wherein the second radiation reflecting structure reflects second radiation generated by the semiconductor structure back towards the semiconductor structure; and
a shell disposed over the energy-converting structure and under the semiconductor structure, the shell defining an opening through which the first radiation generated by the radiation source passes through.
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Abstract
Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.
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Citations
20 Claims
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1. A system comprising:
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a radiation source for generating first radiation; an energy-converting structure disposed over a semiconductor structure, the energy-converting structure configured to convert first radiation into second radiation; a second radiation reflecting structure positioned between the semiconductor structure and the energy-converting structure, wherein the second radiation reflecting structure reflects second radiation generated by the semiconductor structure back towards the semiconductor structure; and a shell disposed over the energy-converting structure and under the semiconductor structure, the shell defining an opening through which the first radiation generated by the radiation source passes through. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A system comprising:
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a first energy-converting structure disposed over a semiconductor structure; a thermal radiation reflecting structure arranged between the first energy-converting structure and the semiconductor structure, the thermal radiation reflecting structure physically contacting the first energy-converting structure; and a radiation source for generating radiation toward the first energy-converting structure, and wherein the radiation source is a microwave radiation source, wherein the first energy-converting structure is configured to convert microwave radiation into thermal radiation, and wherein the thermal radiation reflecting structure reflects thermal radiation generated by the semiconductor structure back towards the semiconductor structure. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
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16. A method comprising:
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forming a thermal radiation reflecting structure directly on a first energy-converting structure; providing radiation to the first energy-converting structure, wherein the thermal radiation reflecting structure is disposed between a semiconductor structure and the first energy-converting structure during the providing of the radiation to the first energy-converting structure; and providing a second energy-converting structure proximate the semiconductor structure, wherein the first energy-converting structure is disposed over a first side of the semiconductor structure and the second energy-converting structure is disposed over a second side that is opposite the first side. - View Dependent Claims (17, 18, 19, 20)
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Specification