Contact pad for semiconductor device

• US 10,453,813 B2
• Filed: 06/26/2017
• Issued: 10/22/2019
• Est. Priority Date: 05/28/2014
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Huang, Chang-Chia, Lin, Tsung-Shu, Hsieh, Cheng-Chieh, Wu, Wei-Cheng
• Primary Examiner(s): Maruf, Sheikh
• Application Number:
  US15/633,414
• Publication Number:
  US 20170301637A1
• Time in Patent Office: 848 Days
• Field of Search: 257 46- 88, 257668, 257212, 257737, 257777, 257676, 257E21705, 257E2302, 438 13
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/05015 being circular or elliptic
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05082 Two-layer arrangements
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05555 : being circular or elliptic
• CPC Class Codes: H01L 2224/06131 : being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/06179 : Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/06515 : Bonding areas having different functions
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/12105 : Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/18 : High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 : Layer and HDI connectors
• CPC Class Codes: H01L 2224/81805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/83005 : being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/838 : Bonding techniques
• CPC Class Codes: H01L 2224/83874 : Ultraviolet [UV] curing
• CPC Class Codes: H01L 2224/92244 : the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2225/1035 : the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1041 : Special adaptations for top connections of the lowermost container, e.g. redistribution layer, integral interposer
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 23/3185 : the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 23/488 : consisting of soldered or bonded constructions bump connectors H01L24/01
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 : Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/2064 : larger or equal to 1 micron less than 100 microns
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H01L 2924/35121 : Peeling or delaminating

Abstract

A device and method of manufacture is provided that utilize a dummy pad feature adjacent contact pads. The contact pads may be contact pads in an integrated fan-out package in which a molding compound is placed along sidewalls of a die and the contact pads extend over the die and the molding compound. The contact pads are electrically coupled to the die using one or more redistribution layers. The dummy pad features are electrically isolated from the contact pads. In some embodiments, the dummy pad features partially encircle the contact pads and are located in a corner region of the molding compound, a corner region of the die, and/or an interface region between an edge of the die and the molding compound.

Claims

1. A device comprising:

a die;

a molding compound along sidewalls of the die;

contact pads over the die and the molding compound; and

dummy pad features, each of the dummy pad features being adjacent a corresponding one of the contact pads, each of the dummy pad features being electrically disconnected from the corresponding one of the contact pads, wherein no other conductive material is interposed between each dummy pad feature and the corresponding one of the contact pads.

2. The device of claim 1, wherein the dummy pad features are positioned in an exterior corner region of the molding compound.

3. The device of claim 1, wherein the dummy pad features are positioned in a corner region of the die.

4. The device of claim 1, wherein the dummy pad features are positioned in an interface region between an edge of the die and the molding compound.

5. The device of claim 1, wherein the dummy pad features comprise a ring partially encircling the contact pads.

6. The device of claim 1, wherein the dummy pad features comprise a metal.

7. A device comprising:

a semiconductor die;

a molding compound along sidewalls of the semiconductor die;

a first contact pad over the semiconductor die and the molding compound; and

a first dummy pad feature adjacent the first contact pad, the first dummy pad feature being electrically isolated from the first contact pad, the first dummy pad feature continuously extending from a first side of the first contact pad to a second side of the first contact pad, wherein the first side and the second side are on opposing sides of first contact pad.

8. The device of claim 7, wherein the first dummy pad feature comprises a ring-shaped feature having an opening, the ring-shaped feature extending partially around the first contact pad.

9. The device of claim 8, further comprising a conductive trace, wherein the conductive trace extends through the opening to the first contact pad.

10. The device of claim 7, wherein the first dummy pad feature comprises a metallic feature.

11. The device of claim 7, wherein the first dummy pad feature is positioned on a side of the first contact pad opposite a center of the semiconductor die.

12. The device of claim 7, wherein the first dummy pad feature has a width between 15 μ

m and 30 μ

m.

13. The device of claim 7, further comprising a second contact pad, the second contact pad being free of a dummy pad feature.

14. A device comprising:

a semiconductor die;

a molding compound along sidewalls of the semiconductor die;

a first contact pad over the semiconductor die and the molding compound;

a second contact pad over the semiconductor die or the molding compound; and

a dummy pad feature adjacent the first contact pad, the dummy pad feature being electrically isolated from the first contact pad and the second contact pad, the second contact pad being free of dummy pad features.

15. The device of claim 14, wherein the first contact pad is closer to a corner of the semiconductor die than the second contact pad.

16. The device of claim 14, wherein the first contact pad is closer to a corner of the molding compound than the second contact pad.

17. The device of claim 14, wherein the dummy pad feature extends along opposing sides of the first contact pad.

18. The device of claim 14, further comprising a trace, the trace extending through an opening the dummy pad feature to the first contact pad.

19. The device of claim 14, wherein the first contact pad is positioned over an interface region, the interface region being an interface between the semiconductor die and the molding compound.

20. The device of claim 14, further comprising a redistribution layer over the molding compound and the semiconductor die, the first contact pad and the second contact pad being over the redistribution layer.