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Semiconductor device including a multigate transistor formed with fin structure

  • US 10,453,839 B2
  • Filed: 01/28/2019
  • Issued: 10/22/2019
  • Est. Priority Date: 05/24/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the first through fifth fins protruding from the substrate and spaced apart from one another, the second fin being disposed between the first fin and the third fin, the third fin being disposed between the second fin and the fourth fin, the fourth fin being disposed between the third fin and the fifth fin;

    a first trench disposed between the first fin and the second fin;

    a second trench disposed between the second fin and the third fin;

    a third trench disposed between the third fin and the fourth fin; and

    a fourth trench disposed between the fourth fin and the fifth fin,wherein a first width of the first trench is less than a second width of the second trench,wherein a third width of the third trench is less than the second width of the second trench,wherein a fourth width of the fourth trench is greater than the third width of the third trench,wherein a first depth of the first trench is less than a second depth of the second trench,wherein a third depth of the third trench is less than the second depth of the second trench, andwherein a fourth depth of the fourth trench is greater than the third depth of the third trench.

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