Semiconductor device including a multigate transistor formed with fin structure
First Claim
1. A semiconductor device, comprising:
- a substrate;
a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the first through fifth fins protruding from the substrate and spaced apart from one another, the second fin being disposed between the first fin and the third fin, the third fin being disposed between the second fin and the fourth fin, the fourth fin being disposed between the third fin and the fifth fin;
a first trench disposed between the first fin and the second fin;
a second trench disposed between the second fin and the third fin;
a third trench disposed between the third fin and the fourth fin; and
a fourth trench disposed between the fourth fin and the fifth fin,wherein a first width of the first trench is less than a second width of the second trench,wherein a third width of the third trench is less than the second width of the second trench,wherein a fourth width of the fourth trench is greater than the third width of the third trench,wherein a first depth of the first trench is less than a second depth of the second trench,wherein a third depth of the third trench is less than the second depth of the second trench, andwherein a fourth depth of the fourth trench is greater than the third depth of the third trench.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a plurality of fins comprising a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the plurality of protruding from the substrate in a first direction, and spaced apart from one another in a second direction that intersects the first direction and a plurality of trenches comprising a first trench, a second trench, a third trench and a fourth trench, each of the plurality of trenches being formed between adjacent fins of the plurality of fins, wherein variation of a first width of the first trench and a third width of the third trench is smaller than a first variation, wherein variation of a second width of the second trench and a fourth width of the fourth trench is smaller than a second variation, and wherein the second variation is greater than the first variation.
32 Citations
20 Claims
-
1. A semiconductor device, comprising:
-
a substrate; a first fin, a second fin, a third fin, a fourth fin and a fifth fin, each of the first through fifth fins protruding from the substrate and spaced apart from one another, the second fin being disposed between the first fin and the third fin, the third fin being disposed between the second fin and the fourth fin, the fourth fin being disposed between the third fin and the fifth fin; a first trench disposed between the first fin and the second fin; a second trench disposed between the second fin and the third fin; a third trench disposed between the third fin and the fourth fin; and a fourth trench disposed between the fourth fin and the fifth fin, wherein a first width of the first trench is less than a second width of the second trench, wherein a third width of the third trench is less than the second width of the second trench, wherein a fourth width of the fourth trench is greater than the third width of the third trench, wherein a first depth of the first trench is less than a second depth of the second trench, wherein a third depth of the third trench is less than the second depth of the second trench, and wherein a fourth depth of the fourth trench is greater than the third depth of the third trench. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A semiconductor device, comprising:
-
a substrate; a first fin structure, a second fin structure, and a third fin structure protruding from the substrate and spaced apart from each other, the second fin structure being disposed between the first fin structure and the third fin structure; a first trench disposed between the first fin structure and the second fin structure; and a second trench disposed between the second fin structure and the third fin structure, wherein the first fin structure includes a first base fin protruding from the substrate, a first fin and a second fin protruding from the first base fin and spaced apart from each other, and a third trench disposed between the first fin and the second fin, wherein the second fin structure includes a second base fin protruding from the substrate, a third fin and a fourth fin protruding from the second base fin and spaced apart from each other, and a fourth trench disposed between the third fin and the fourth fin, wherein each of a first width of the first trench and a second width of the second trench is greater than a third width of the third trench, and is greater than a fourth width of the fourth trench, and wherein each of a first depth of the first trench and a second depth of the second trench is greater than a third depth of the third trench, and is greater than a fourth depth of the fourth trench. - View Dependent Claims (9, 10, 11, 12)
-
-
13. A semiconductor device, comprising:
-
a substrate; a first fin, a second fin, a third fin and a fourth fin, each of the first through fourth fins protruding from the substrate and spaced apart from one another, the second fin being disposed between the first fin and the third fin, the third fin being disposed between the second fin and the fourth fin; a first trench disposed between the first fin and the second fin; a second trench disposed between the second fin and the third fin; and a third trench disposed between the third fin and the fourth fin, wherein a first width of the first trench is less than a second width of the second trench, a third width of the third trench is less than the second width of the second trench, a first depth of the first trench is less than a second depth of the second trench, and wherein a third depth of the third trench is less than the second depth of the second trench. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
-
Specification