Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus
First Claim
Patent Images
1. A method of manufacturing a semiconductor device, the method including the steps of:
- forming a first material layer with a first surface and a second surface;
forming a first insulating layer in the first material layer;
forming a second material layer with a first surface and a second surface;
forming a second insulating layer in the second material layer;
securing the second surface of the first material layer against the first surface of the second material layer; and
forming a first via and a second via simultaneously, wherein along a common cross section parallel to an interface between the two material layers the first via has a cross section larger than that of the second via, wherein the first via extends into the second insulating layer in the second material layer, and wherein the second via extends into the first insulating layer in the first material layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
-
Citations
6 Claims
-
1. A method of manufacturing a semiconductor device, the method including the steps of:
-
forming a first material layer with a first surface and a second surface; forming a first insulating layer in the first material layer; forming a second material layer with a first surface and a second surface; forming a second insulating layer in the second material layer; securing the second surface of the first material layer against the first surface of the second material layer; and forming a first via and a second via simultaneously, wherein along a common cross section parallel to an interface between the two material layers the first via has a cross section larger than that of the second via, wherein the first via extends into the second insulating layer in the second material layer, and wherein the second via extends into the first insulating layer in the first material layer. - View Dependent Claims (2, 3, 4, 5, 6)
-
Specification