Solid-state image sensing device, manufacturing method, and electronic apparatus
First Claim
1. A solid-state image sensing device, comprising:
- a redistribution layer that includes a barrier layer and a plated power supply layer, whereincrystallinity of a film of the plated power supply layer is controlled during deposition of a film of the barrier layer and the film of the plated power supply layer, andthickness of the barrier layer is 250 nm.
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Abstract
The present disclosure relates to a solid-state image sensing device, a manufacturing method, and an electronic apparatus, in which surface roughness on a wiring surface can be suppressed. In redistribution layer forming processing, a Ti/Cu film corresponds to a barrier layer and a seed layer is formed by Ti/Cu sputtering after opening a through-silicon via. At this point, actually, degassing heating, reverse sputtering, Ti deposition, and Seed-Cu deposition are sequentially performed. As a method of depositing a Seed-Cu film having high crystallinity in deposition of the Seed-Cu film, performing deposition by increasing a substrate temperature to a high temperature is one method, and the Seed-Cu film of Cu(111)/(200) is formed by performing deposition at the substrate temperature of 60 degrees or more, and Cu haze are suppressed. The present disclosure can be applied to a CMOS solid-state image sensing device used as an imaging device such as a camera.
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9 Claims
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1. A solid-state image sensing device, comprising:
a redistribution layer that includes a barrier layer and a plated power supply layer, wherein crystallinity of a film of the plated power supply layer is controlled during deposition of a film of the barrier layer and the film of the plated power supply layer, and thickness of the barrier layer is 250 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A manufacturing method, comprising:
depositing, a film of a barrier layer and a film of a plated power supply layer to form a redistribution layer, wherein crystallinity of the film of the plated power supply layer is controlled during the deposition of the barrier layer and the film of the plated power supply layer, and thickness of the barrier layer is 250 nm.
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9. An electronic apparatus, comprising:
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a solid-state image sensing device that comprises a redistribution layer, wherein the redistribution layer includes a barrier layer and a plated power supply layer, wherein crystallinity of a film of the plated power supply layer is controlled during deposition of a film of the barrier layer and the film of the plated power supply layer, and thickness of the barrier layer is 250 nm; a signal processing circuit configured to process an output signal received from the solid-state image sensing device; and an optical system configured to allow incident light to enter the solid-state image sensing device.
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Specification